Prof. Dr. rer. nat. habil.
Jürgen Werner
Institutsleiter

Dieses Bild zeigt  JürgenWerner
Telefon+49 711 685-67140
Telefax+49 711 685-67143
Raum1.215
E-Mail
Adresse
Universität Stuttgart
Institut für Photovoltaik
Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Publikationen von Jürgen H. Werner (PUMA):
  1. 2016

    1. M. Dahlinger, K. Carstens, E. Hoffmann, R. Zapf-Gottwick, and J.H. Werner, “23.2 % laser processed back contact solar cell: Fabrication, characterization and modeling”, Prog. Photovolt: Res. Appl. 25, 192 (2016).
    2. E. Hoffmann, M. Dahlinger, K. Carstens, S. Wansleben, R. Zapf-Gottwick, and J.H. Werner, “5" Laser-IBC Solar Cells with 22.0% Efficiency”, in: Proc. 32nd Euro. Photovolt. Solar Energy Conf., edited by M. Topic, N. Taylor and P. Helm, WIP, Munich, (2016), pp. 580–582, DOI: 10.4229/EUPVSEC20162016-2DO.16.5.
    3. S. Huber, J. Nover, R. Zapf-Gottwick, C. Feifel, M. Koch, J.W. Metzger, and J.H. Werner, “Enhanced Leaching of Photovoltaic Modules by Illumination”, in: Proc. of the 5th International Education Forum on Environment and Energy Science, (2016), DOI: 10.13140/RG.2.2.16293.29923.
    4. C. Sämann, K. Kelesiadou, S.S. Hosseinioun, M. Wachtler, J.R. Köhler, P. Birke, M. Schubert, and J.H. Werner, “Porous Silicon Thin Film Anodes for Lithium Ion Batteries”, in: Proc. of the 5th International Education Forum on Environment and Energy Science, (2016), DOI: 10.13140/RG.2.2.35267.60962.
    5. C. Sämann, J.R. Köhler, M. Dahlinger, M.B. Schubert, and J.H. Werner, “Pulsed Laser Porosification of Silicon Thin Films”, Materials 9, 509 (2016), DOI: 10.3390/ma9070509.
    6. T. Kropp, J. Wang, M.B. Schubert, and J.H. Werner, “The Electricity Bank: Innovative operating model for local energy storage”, Proc. of the 5th International Education Forum on Environment and Energy Science (2016), DOI: 10.13140/RG.2.2.11150.36162.
  2. 2015

    1. M. Dahlinger, K. Carstens, E. Hoffmann, S. Wansleben, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “23.2% Efficiency with Laser Processed IBC Solar Cells”, in: 31st European Photovoltaic Solar Energy Conference and Exhibition, WIP, München (2015), pp. 462–465, DOI: 10.4229/EUPVSEC20152015-2DO.2.4.
    2. K. Carstens, M. Dahlinger, E. Hoffmann, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Amorphous Silicon Passivation for p ++ and n ++ Areas on IBC Solar Cells”, in: Proc. of the 4th International Education Forum on Environment and Energy Science, (2015), DOI: 10.13140/RG.2.2.13666.94407.
    3. M. Dahlinger, K. Carstens, E. Hoffmann, R. Zapf-Gottwick, and J.H. Werner, “Laser Processed Silicon Back Contact Solar Cells Exceeding 23% Efficiency”, in: Proc. of the 4th International Education Forum on Environment and Energy Science, (2015), DOI: 10.13140/RG.2.2.26149.91365.
    4. M. Dahlinger, B. Bazer-Bachi, T.C. Röder, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Laser-Doped Back-Contact Solar Cells”, IEEE J. Photovoltaics 5, 812 (2015).
    5. R. Zapf-Gottwick, M. Koch, K. Fischer, F. Schwerdt, L. Hamann, M. Kranert, J. Metzger, and J. Werner, “Leaching Hazardous Substances out of Photovoltaic Modules”, Int. J. Adv. App. Phy. Res. 2, 7 (2015), DOI: 10.15379/2408-977x.2015.02.02.2.
    6. K. Carstens, M. Dahlinger, E. Hoffmann, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Universal Passivation for p++ and n++ Areas on IBC Solar Cells”, Energy Procedia 77, 779 (2015).
  3. 2014

    1. L. Stoicescu, M. Reuter, and J.H. Werner, “DaySy: Luminescence Imaging of PV Modules in Daylight”, in: 29th European Photovoltaic Solar Energy Conference and Exhibition, WIP, München (2014), pp. 2553–2554, DOI: 10.4229/EUPVSEC20142014-5DO.16.2.
    2. L. Stoicescu, M. Berner, M. Reuter, and J.H. Werner, “DaySy: Modulprüfung mittels Tageslicht-Lumineszenz”, in: Proc. 29. Symposium Photovoltaische Solarenergie, Bad Staffelstein, Germany (2014).
    3. M. Dahlinger, K. Carstens, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Laser Doped Screen-printed Back Contact Solar Cells Exceeding 21% Efficiency”, Energy Procedia 55, 410 (2014).
    4. D. Tsukahara, M. Baba, S. Honda, Y. Imai, K.O. Hara, N. Usami, K. Toko, J.H. Werner, and T. Suemasu, “Potential variations around grain boundaries in impurity-doped BaSi_2 epitaxial films evaluated by Kelvin probe force microscopy”, Journal of Applied Physics 116, 123709 (2014), DOI: http://dx.doi.org/10.1063/1.4896760.
    5. A. Garamoun, M.B. Schubert, and J.H. Werner, “Thin-Film Silicon for Flexible Metal–Air Batteries”, ChemSusChem 7, 3272 (2014), DOI: 10.1002/cssc.201402463.
  4. 2013

    1. G. Kulushich, R. Zapf-Gottwick, B. Bazer-Bachi, and J.H. Werner, “18.4% Efficient Grid Optimized Cells With 100-Ω/sq Emitter”, IEEE Journal of Photovoltaics 3, 254 (2013), DOI: 10.1109/JPHOTOV.2012.2226143.
    2. M. Dahlinger, B. Bazer-Bachi, T. Röder, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “22.0% Efficient Laser Doped Back Contact Solar Cells”, Energy Procedia 38, 250 (2013).
    3. P. Gedeon, L. Stoicescu, M.B. Schubert, and J.H. Werner, “Correct Carrier Concentration for Lifetime Measurements with Local Illumination”, Energy Procedia 38, 49 (2013), DOI: 10.1016/j.egypro.2013.07.248.
    4. Y. Weng, B. Kedjar, K. Ohmer, J.R. Köhler, J.H. Werner, and H.P. Strunk, “Dislocation formation during laser processing of silicon solar cell materials”, physica status solidi (c) 10, 28 (2013), DOI: 10.1002/pssc.201200548.
    5. E. Hoffmann, T. Roeder, J.R. Köhler, and J.H. Werner, “Effect of silicon dioxide ablation during laser transferred contacts process”, in: Proc. of the 2nd International Education Forum on Environment and Energy Science, Tokyo Institute of Technology, (2013), DOI: 10.13140/2.1.2150.5608.
    6. J.H. Werner, “Photovoltaic Technologies – Perspectives for South Africa”, in: Proceedings Report: Technological Innovations for A Low Carbon Society Conference (Academy of Science of South Africa), (2013).
    7. J. Cichoszewski, M. Reuter, F. Schwerdt, and J.H. Werner, “Role of catalyst concentration on metal assisted chemical etching of silicon”, Electrochim. Acta 109, 333 (2013).
  5. 2012

    1. J. Cichoszewski, M. Reuter, and J.H. Werner, “+0.4% Efficiency gain by novel texture for String Ribbon solar cells”, Solar Energy Materials and Solar Cells 101, 1 (2012), DOI: http://dx.doi.org/10.1016/j.solmat.2012.01.031.
    2. B. Bazer-Bachi, G. Kulushich, T. Takahashi, H. Iida, R. Zapf-Gottwick, and J.H. Werner, “18.3% Efficiency on High Ohmic Emitters without Selective Emitters”, Energy Procedia 27, 531 (2012).
    3. M. Dahlinger, B. Bazer-Bachi, T.C. Röder, R. Zapf-Gottwick, J.R. Köhler, and J.H. Werner, “19.2 % Laser doped Back Contact Solar Cell”, in: Proc. 5th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2012), DOI: 10.13140/2.1.1527.9689.
    4. L. Stoicescu, M. Reuter, and J.H. Werner, “Absolute Quantification of Gettering Efficiency from Luminescence Images”, Energy Procedia 27, 129 (2012).
    5. L. Hamann, L. Proenneke, M. Reuter, and J.H. Werner, “Colored ribbons achieve +0.3% abs module efficiency gain”, in: 22nd International Photovoltaic Science and Engineering Conference, Hangzhou, China (2012), pp. 22_1-P-48.
    6. L. Hamann, L. Prönneke, and J.H. Werner, “Colored Ribbons Achieve+ 0.28% Efficiency Gain”, IEEE Journal of Photovoltaics 2, 494 (2012).
    7. G. Kulushich, B. Bazer-Bachi, T. Takahashi, H. Iida, R. Zapf-Gottwick, and J.H. Werner, “Contact Formation on 100Ω/sq Emitter by Screen Printed Silver Paste”, Energy Procedia 27, 485 (2012).
    8. L. Stoicescu, M. Reuter, and J.H. Werner, “Daylight Luminescence for Photovoltaic System Testing”, in: Proc. 22nd International Photovoltaic Science and Engineering Conference, Hangzhou, China (2012), pp. 22_5-P-14.
    9. P.C. Lill, M. Dahlinger, K.J. R., and J.H. Werner, “Full Area Antimony Laser Doped p-type Solar Cells”, in: Proc. 5th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2012), DOI: 10.13140/2.1.2052.2565.
    10. M. Dahlinger, S.J. Eisele, P.C. Lill, J.R. Köhler, and J.H. Werner, “Full area laser doped boron emitter silicon solar cells”, in: Proc. 38th IEEE Photovoltaic Specialists Conference (PVSC), IEEE, New York, USA (2012), pp. 1029–1031, DOI: 10.1109/PVSC.2012.6317778.
    11. J. Cichoszewski, M. Reuter, V. Speer, G. Willers, H.J. Axmann, and J.H. Werner, “Industrial Implementation of Metal Assisted Texture for Multi-crystalline Silicon Solar Cells”, in: Proc. 22nd International Photovoltaic Science and Engineering Conference, Hangzhou, China (2012), pp. 22_1-O-19, DOI: 10.13140/2.1.4058.6563.
    12. P.C. Lill, M. Dahlinger, J.R. Köhler, and J.H. Werner, “Laser Doping of Silicon Using Antimony”, in: 27th European Photovoltaic Solar Energy Conference, WIP, Munich, (2012), pp. 1894–1896, DOI: 10.4229/27thEUPVSEC2012-2CV.6.37.
    13. M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Laser induced lifetime degradation in p-type crystalline silicon”, Journal of Applied Physics 111, 114 (2012).
    14. G. Kulushich, R. Zapf-Gottwick, A. Samadi, and J.H. Werner, “Optimization of Laser Processed Back-Contacted Silicon Solar Cells”, in: Proc. 27th European Photovoltaic Solar Energy Conference, WIP, Munich (2012), pp. 1272–1277, DOI: 10.4229/27thEUPVSEC2012-2AV.6.28.
    15. B. Bazer-Bachi, P.C. Lill, M. Dahlinger, S.J. Eisele, R. Zapf-Gottwick, J.R. Köhler, and J.H. Werner, “Optimizing P Furnace Diffusion Layers for Laser Doping”, in: Proc. 27th European Photovoltaic Solar Energy Conference, WIP, Munich (2012), pp. 1954–1957, DOI: 10.4229/27thEUPVSEC2012-2CV.6.56.
    16. G. Kulushich, R. Zapf-Gottwick, V.X. Nguyen, and J.H. Werner, “Role of phosphorus in contact formation on silicon solar cells”, physica status solidi (RRL) – Rapid Research Letters 6, 370 (2012), DOI: 10.1002/pssr.201206298.
  6. 2011

    1. K. Ohmer, Y. Weng, J.R. Köhler, H.P. Strunk, and J.H. Werner, “Defect Formation in Silicon During Laser Doping”, IEEE Journal of Photovoltaics 1, 183 (2011), DOI: 10.1109/JPHOTOV.2011.2173298.
    2. K. Carstens, M. Reuter, J. Cichoszewski, P. Gedeon, and J.H. Werner, “Influence of Thickness Deviation on crystalline Silicon Solar Cell Performance”, Energy Procedia 8, 461 (2011).
    3. J.H. Werner, M. Reuter, R. Zapf-Gottwick, J.R. Köhler, and M. Schubert, “Innovative Concepts for Solar Cells”, in: Proc. 4th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2011).
    4. M. Dahlinger, S.J. Eisele, J.R. Köhler, and J.H. Werner, “Laser Doped Boron Emitters with Sputtered Precursor”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 1152–1154, DOI: 10.4229/26thEUPVSEC2011-2DO.2.3.
    5. G. Kulushich, R. Zapf-Gottwick, and J.H. Werner, “Numerical Simulation of Fully Laser Processed Back-Contact Back-Junction Solar Cells”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 275–280, DOI: 10.4229/26thEUPVSEC2011-1CV.3.16.
    6. J. Kistner, M.B. Schubert, and J.H. Werner, “Photoluminescence from silicon nitride alloys”, in: Proc. of SPIE 8094 (Nanophotonic Materials VIII), SPIE Digital Library, (2011), pp. 80940M-80940M–6, DOI: 10.1117/12.892676.
    7. J. Kistner, X. Chen, Y. Weng, H.P. Strunk, M.B. Schubert, and J.H. Werner, “Photoluminescence from silicon nitride-no quantum effect”, Journal of Applied Physics 110, (2011), DOI: 10.1063/1.3607975.
    8. G. Makrides, B. Zinßer, A. Phinikarides, M. Norton, G.E. Georghiou, M. Schubert, and J.H. Werner, “Photovoltaic model uncertainties based on field measurements”, in: Conf. Rec. 37th IEEE Photovoltaic Spec.s Conf., IEEE Publishing Service, Piscataway, NY (2011), pp. 002386–002390, DOI: 10.1109/PVSC.2011.6186430.
    9. R. Merz, M.B. Schubert, and J.H. Werner, “Roll-to-Roll Front Contact Patterning by Wire Shading”, MRS Proceedings 1323, mrss11 (2011).
    10. B. Zinßer, M.B. Schubert, and J.H. Werner, “Spectral Dependent Annual Yield of Different Photovoltaic Technologies”, in: Proc. 26th Europ. Photovolt. Solar Energy Conf., WIP, Munich, Germany (2011), pp. 3615 – 3618, DOI: 10.4229/26thEUPVSEC2011-4AV.2.42.
    11. J.H. Werner, R. Zapf-Gottwick, M. Koch, and K. Fischer, “Toxic Substances in Photovoltaic Modules”, in: Techn. Digest Intern. PVSEC-21, Kennung 3B-7O-06, Fukuoka, Japan (2011).
    12. E. Hoffmann, T.C. Röder, B. Conrad, J.R. Köhler, and J.H. Werner, “Two Step Process for Optimized Laser Transferred Contacts”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 1640–1643, DOI: 10.4229/26thEUPVSEC2011-2BV.3.17.
    13. L. Hamann, G.C. Gläser, L. Prönneke, and J.H. Werner, “White Grid Fingers for Short Circuit Current Gain in Modules”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 487–491, DOI: 10.4229/26thEUPVSEC2011-1DV.2.30.
  7. 2010

    1. T.C. Röder, E. Hoffmann, J.R. Köhler, and J.H. Werner, “30 µm wide contacts on silicon cells by laser transfer”, in: Proc. of the 35th IEEE Photovoltaic Specialists Conference (PVSC), IEEE, New York, USA (2010), pp. 3597–3599, DOI: 10.1109/PVSC.2010.5614378.
    2. T.C. Röder, S.J. Eisele, P. Grabitz, C. Wagner, G. Kulushich, J.R. Köhler, and J.H. Werner, “Add-on laser tailored selective emitter solar cells”, Progress in Photovoltaics: Research and Applications 18, 505 (2010), DOI: 10.1002/pip.1007.
    3. P. Gedeon, M. Reuter, J. Cichoszewski, K. Carstens, and J.H. Werner, “Analysis of 100 µm thick String Ribbon Solar Cells”, in: Proc. 3rd Int. Forum on Multidisciplinary Educ. and Res. fro Energy Science, Tokyo Institute of Technology, Tokyo, Japan (2010), pp. 91–92.
    4. C. Ehling, J.H. Werner, and M.B. Schubert, “a‐SiC:H passivation for crystalline silicon solar cells”, physica status solidi (c) 7, 1016 (2010), DOI: 10.1002/pssc.200982849.
    5. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Degradation of different photovoltaic technologies under field conditions”, in: Conf. Rec. 35th IEEE Photovolt. Spec. Conf., IEEE Publishing Service, Piscataway, NY (2010), pp. 2332–2337, DOI: 10.1109/PVSC.2010.5614439.
    6. K. Ohmer, Y. Weng, J.R. Köhler, H.P. Strunk, and J.H. Werner, “Effect of Pulse Energy Density on Silicon during Laser Doping”, in: 4th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo, Japan (2010), DOI: 10.13140/2.1.3100.8320.
    7. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Evaluation of grid-connected photovoltaic system performance losses in Cyprus”, in: 7th Mediterranean Conference and Exhibition on Power Generation, Transmission, Distribution and Energy Conversion (MedPower 2010), Institution of Engineering and Technology (IET), Aiga Napa, Cyprus (2010), pp. 52–57, DOI: 10.1049/cp.2010.0883.
    8. V. Nguyen, M. Reuter, P. Gedeon, R. Zapf-Gottwick, and J.H. Werner, “Heavily Doped Emitter Analysis and Optimization for Crystalline Silicon Solar Cells”, in: Proc. 25th European Photovoltaic Solar Energy Conference, WIP, Munich (2010), pp. 2028–2031, DOI: 10.4229/25thEUPVSEC2010-2CV.2.86.
    9. L. Stoicescu, G.C. Gläser, M. Reuter, U. Rau, and J.H. Werner, “Ideality Factor Extraction from Photoluminescence Images”, in: Proc. 25th European Photovoltaic Solar Energy Conference, WIP, Munich (2010), pp. 29–32, DOI: 10.4229/25thEUPVSEC2010-1AO.4.3.
    10. G. Makrides, B. Zinßer, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Modelling the Power Output and Energy Yield of 13 Different Photovoltaic Systems”, in: Proc. 25th Europ. Photovolt. Solar Energy Conf., WIP, Munich, Germany (2010), pp. 4682–4687, DOI: 10.4229/25thEUPVSEC2010-4BV.1.89.
    11. L. Proenneke, M. Reuter, G.C. Glaeser, and J.H. Werner, “Module efficiency increase by colored cell connectors”, in: Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, IEEE, Institute of Physical Electronics, University of Stuttgart, Stuttgart, Germany (2010), pp. 002795–002797.
    12. G. Makrides, B. Zinßer, M. Norton, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Outdoor Performance Evaluation of Grid-Connected PV Technologies in Cyprus”, Journal of Energy and Power Engineering 4, 52 (2010).
    13. G. Makrides, B. Zinßer, M. Norton, G.E. Georghiou, M. Schubert, and J.H. Werner, “Potential of photovoltaic systems in countries with high solar irradiation”, Renewable and Sustainable Energy Reviews 14, 754 (2010), DOI: http://dx.doi.org/10.1016/j.rser.2009.07.021.
    14. A. Helbig, T. Kirchartz, R. Schaeffler, J.H. Werner, and U. Rau, “Quantitative electroluminescence analysis of resistive losses in Cu(In, Ga)Se_2 thin-film modules”, Solar Energy Materials and Solar Cells 94, 979 (2010), DOI: DOI 10.1016/j.solmat.2010.01.028.
    15. B. Zinßer, G. Makrides, M.B. Schubert, G.E. Georghiou, and J.H. Werner, “Rating of annual energy yield more sensitive to reference power than module technology”, in: Conf. Rec. 35th IEEE Photovolt. Spec. Conf., IEEE Publishing Service, Piscataway, NY (2010), pp. 1095–1099, DOI: 10.1109/PVSC.2010.5614705.
  8. 2009

    1. C. Ehling, M.B. Schubert, R. Merz, J. Müller, M. Hlusiak, P.J. Rostan, and J.H. Werner, “0.4% absolute efficiency gain by novel back contact”, Solar Energy Materials and Solar Cells 93, 707 (2009), DOI: http://dx.doi.org/10.1016/j.solmat.2008.09.036.
    2. T. Röder, P. Grabitz, S. Eisele, C. Wagner, J.R. Köhler, and J.H. Werner, “0.4% absolute efficiency gain of industrial solar cells by laser doped selective emitter”, in: Proc. 34th IEEE Photovoltaic Specialists Conference (PVSC), IEEE Publishing Service, Piscataway; NY, USA (2009), pp. 871–873, DOI: 10.1109/PVSC.2009.5411149.
    3. S.J. Eisele, T.C. Röder, J.R. Köhler, and J.H. Werner, “18.9% efficient full area laser doped silicon solar cell”, Applied Physics Letters 95, 1 (2009), DOI: http://dx.doi.org/10.1063/1.3232208.
    4. S. Eisele, T. Röder, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “18.9% efficient silicon solar cell with laser doped emitter”, in: Proc. 34th IEEE Photovoltaic Specialists Conference (PVSC), IEEE Publishing Service, Piscataway, NY (2009), pp. 883–885, DOI: 10.1109/PVSC.2009.5411148.
    5. M. Reuter, W. Brendle, O. Tobail, and J.H. Werner, “50 μm thin solar cells with 17.0% efficiency”, Solar Energy Materials and Solar Cells 93, 704 (2009), DOI: http://dx.doi.org/10.1016/j.solmat.2008.09.035.
    6. M. Ibrahim, B. Zinßer, H. El-Sherif, E. Hamouda, G. Makrides, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Advanced Photovoltaic Test Park in Egypt for Investigating the Performance of Different Module and Cell Technologies”, in: 24. Symposium Photovoltaische Solarenergie, OTTI, Bad Staffelstein (2009), pp. 318–323.
    7. G. Kulushich, R. Zapf-Gottwick, M. Mühlbauer, V.X. Nguyen, and J.H. Werner, “Advanced Solar Cell Front Grid Optimization”, in: Proc. 24th Europ. Photovolt. Solar Conf., WIP, Munich (2009), pp. 2237–2241, DOI: 10.4229/24thEUPVSEC2009-2DV.1.74.
    8. C. Duran, S.J. Eisele, T. Buck, R. Kopecek, J.R. Köhler, and J.H. Werner, “Bifacial Solar Cells with Selective B-BSF by Laser Doping”, in: Proc. 24th Europ. Photovolt. Solar Conf., WIP, Munich (2009), pp. 1775–1778, DOI: 10.4229/24thEUPVSEC2009-2CV.5.19.
    9. C. Köhler, M.B. Schubert, B. Lutz, J.H. Werner, J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, A. Calderón, M.G. Fernández, G. Gómez, F.J. González-Sánchez, C. Martínez-Rivero, F. Matorras, T. Rodrigo, M. Sobrón, I. Vil, and A.L. Virto, “Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring”, Nuclear Instruments and Methods in Physics Research A 608, 55 (2009), DOI: http://dx.doi.org/10.1016/j.nima.2009.06.058.
    10. A. Helbig, T. Kirchartz, R. Schäffler, J.H. Werner, and U. Rau, “Electroluminescence Analysis of Cu(In,Ga)Se_2 Thin Film Modules”, in: Proc. 24th Europ. Photovolt. Solar Energy Conf., WIP, Munich (2009), pp. 2446–2449, DOI: 10.4229/24thEUPVSEC2009-3DO.5.5.
    11. B. Zinßer, G. Makrides, M.B. Schubert, G.E. Georghiou, and J.H. Werner, “Energy Yield Depends More on Reference Power than on Photovoltaic Technology”, in: Internat. Forum on Multidisciplinary Education and Research for Energy Science  (Energy- GCOE), Okinawa, Japan (2009).
    12. G. Makrides, B. Zinßer, M. Norton, G.E. Georghiou, M. Schubert, and J.H. Werner, “Error Sources in Outdoor Performance Evaluation of Photovoltaic Systems”, in: Proc. 24th Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich, Germany (2009), pp. 3904–3908, DOI: 10.4229/24thEUPVSEC2009-5AO.8.4.
    13. G. Makrides, B. Zinßer, M. Norton, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Evaluation of concentrator PV modules under conditions of high direct solar irradiance”, Distres (2009).
    14. R. Merz, M.B. Schubert, and J.H. Werner, “Flex PV Modules by Monolithic Series Connection During Thin Film Dep”, Photovoltaics World 1, 50 (2009).
    15. A. Al Tarabsheh, M.B. Schubert, M.S. Widyan, I. Etier, and J.H. Werner, “ICEGES 2009”, International Conference and Exhibition on Green Energy & Sustainability for Arid Regions & Mediterranean Countries 1 (2009).
    16. R. Zapf-Gottwick, J. Cichoszewski, O. Fechtig, M. Mühlbauer, K. Metzner, T. Schlenker, D. Manz, and J.H. Werner, “Improved Concept for Industrial Screen Printing Line”, in: Proc. 24th Europ. Photovolt. Solar Energy Conf., WIP, Munich (2009), p. 1390.
    17. J.R. Köhler, P. Grabitz, S.J. Eisele, T.C. Röder, and J.H. Werner, “Laser Doped Selective Emitters Yield 0.5% Efficiency Gain”, in: Proc. 24th Europ. Photovolt. Solar Conf., WIP, Munich (2009), pp. 1847–1850, DOI: 10.4229/24thEUPVSEC2009-2CV.5.38.
    18. B. Zinßer, G. Makrides, M. Ibrahim, H. El-Sherif, E. Hamouda, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Mehrertrag durch Nachführung in Deutschland, Zypern und Ägypten”, in: 24. Symposium Photovoltaische Solarenergie, OTTI, Bad Staffelstein (2009), pp. 312–317.
    19. R. Merz, J. Kistner, M.B. Schubert, and J.H. Werner, “Novel in situ series connection for thin film photovoltaic modules”, Proc. of SPIE 7409, Thin Film Solar Technology 74090K1 (2009), DOI: 10.1117/12.826132.
    20. O. Tobail, M. Reuter, S. Eisele, and J.H. Werner, “Novel separation process for free-standing silicon thin-films”, Solar Energy Materials and Solar Cells 93, 710 (2009), DOI: http://dx.doi.org/10.1016/j.solmat.2008.09.014.
    21. O. Tobail, M. Reuter, and J.H. Werner, “Origin of the open circuit voltage limit for transfer solar cells”, Proc. 24th European Photovoltaic Solar Energy Conference, WIP, Munich, Germany 2593 (2009).
    22. T. Kirchartz, A. Helbig, W. Reetz, M. Reuter, J.H. Werner, and U. Rau, “Reciprocity Between Electroluminescence and Quantum Efficiency Used for the Characterization of Silicon Solar Cells”, Progress in Photovoltaics 17, 394 (2009), DOI: Doi 10.1002/Pip.895.
    23. B. Zinßer, G. Makrides, M. Schubert, G.E. Georghiou, and J.H. Werner, “Temperature and Irradiance Effects on Outdoor Field Performance”, in: Proc. 24th Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich, Germany (2009), pp. 4083–4086, DOI: 10.4229/24thEUPVSEC2009-5BV.2.19.
    24. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Temperature behaviour of different photovoltaic systems installed in Cyprus and Germany”, Solar Energy Materials and Solar Cells 93, 1095 (2009), DOI: http://dx.doi.org/10.1016/j.solmat.2008.12.024.
    25. C. Ehling, G. Bilger, J.H. Werner, and M.B. Schubert, “Thermally Stable a-Si1-xCx:H Passivation Layers”, in: Proc. 24th Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich, Germany (2009), pp. 1628–1631, DOI: 10.4229/24thEUPVSEC2009-2CV.2.57.
    26. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Two year performance evaluation of different grid connected photovoltaic systems”, in: Conf. Rec. 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, IEEE Publishing Service, Piscataway, NY (2009), pp. 000770–000775, DOI: 10.1109/PVSC.2009.5411169.
  9. 2008

    1. C. Ehling, R. Merz, J.W. Müller, M. Hlusiak, J.H. Werner, and M.B. Schubert, “0.8 % Efficiency Gain by Low temperature Back Contact”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 11.
    2. C. Ehling, R. Merz, J.W. Müller, M. Hlusiak, P.J. Rostan, J.H. Werner, and M.B. Schubert, “0.8 % Higher Efficiency by Low Temperature Back Contact”, in: In Proc. 23rd Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich, Germany (2008), p. 1657, DOI: 10.4229/23rdEUPVSEC2008- 2CV.5.22.
    3. M.R. Balboul, H.W. Schock, S.A. Fayak, A.A. El-Aal, J.H. Werner, and A.A. Ramadan, “Correlation of structure parameters of absorber layer with efficiency of Cu(In,Ga)Se_2 solar cell”, Applied Physics A 92, 557 (2008), DOI: 10.1007/s00339-008-4630-z.
    4. G. Makrides, B. Zinßer, M. Norton, G.E. Georghiou, M.B. Schubert, and J.H. Werner, “Energy yield of different photovoltaic systems installed in Cyprus”, in: Proc. 4th Photovoltaic Science Application and Technology Conference (PVSAT-4), Bath, UK (2008), pp. 199–203.
    5. T. Röder, A. Esturo-Breton, S. Eisele, C. Wagner, J.R. Köhler, and J.H. Werner, “Fill Factor of Laser Doped Textured Silicon Solar Cells”, in: Proc. 23rd Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich (2008), p. 1740, DOI: 10.4229/23rdEUPVSEC2008-2CV.5.50.
    6. J. Mattheis, J.H. Werner, and U. Rau, “Finite mobility effects on the radiative efficiency limit of pn-junction solar cells”, Phys. Rev. B 77, 085203 (2008), DOI: 10.1103/PhysRevB.77.085203.
    7. R. Merz, J.H. Werner, and M.B. Schubert, “In-Situ Series Connection for Thin Film Photovoltaic Modules”, in: The First International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo, (2008), p. 99.
    8. R. Merz, M.M. Adachi, M.B. Schubert, and J.H. Werner, “In-Situ Series Connection for Thin Film Photovoltaic Modules”, in: Proc. 23rd Europ. Photovolt. Solar Energy Conf., WIP, Munich, Germany (2008), pp. 2411–2413, DOI: 10.4229/23rdEUPVSEC2008-3AV.2.22.
    9. T. Kirchartz, U. Rau, M. Hermle, A.W. Bett, A. Helbig, and J.H. Werner, “Internal voltages in GaInP∕GaInAs∕Ge multijunction solar cells determined by electroluminescence measurements”, Applied Physics Letters 92, (2008), DOI: http://dx.doi.org/10.1063/1.2903101.
    10. B. Zinßer, G. Makrides, M.B. Schubert, G.E. Georghiou, and J.H. Werner, “Jahresenergieertrag von 13 verschiedenen Photovoltaik-Technologien in Deutschland und Zypern”, in: 23rd Symp.Photovoltaische Solarenergie, OTTI, Bad Staffelstein (2008), pp. 294–299.
    11. T. Röder, C. Wagner, J. Köhler, and J.H. Werner, “Laser Doped Selective Emitter for Silicon Solar Cells”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 17, DOI: 10.13140/2.1.3362.9761.
    12. O. Tobail, Z. Yan, M. Reuter, and J.H. Werner, “Lateral homogeneity of porous silicon for large area transfer solar cells”, Thin Solid Films 516, 6959 (2008), DOI: http://dx.doi.org/10.1016/j.tsf.2007.12.030.
    13. R. Zapf-Gottwick, J. Cichoszewski, O. Fechtig, M. Mühlbauer, J.H. Werner, D. Manz, K. Metzner, and T. Schlenker, “New Industrial Screen Printing Line for Silicon Solar Cells”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 9.
    14. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Outdoor efficiency of different photovoltaic systems installed in Cyprus and Germany”, in: Conf. Rec. 33th IEEE Photovolt. Spec. Conf., IEEE Publishing Service, Piscataway, NY (2008), pp. 1–6, DOI: 10.1109/PVSC.2008.4922830.
    15. S. Eisele, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Phosphorus Sputtered Laser Doped Emitters”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 13.
    16. S. Eisele, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Phosphorus Sputtered Laser Doped Emitters”, 23rd European Photovoltaic Solar Energy Conference and Exhibition 1737 (2008), DOI: 10.4229/23rdEUPVSEC2008-2CV.5.49.
    17. J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, A. Calderón, G. Gómez, F.J. González-Sánchez, C. Martínez-Rivero, F. Matorras, T. Rodrigo, P. Ruiz-Arbol, M. Sobrón, I. Vila, A.L. Virto, C. Köhler, B. Lutz, M.B. Schubert, and J.H. Werner, “Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors”, Nuclear Instruments and Methods in Physics Research A 593, 608 (2008), DOI: http://dx.doi.org/10.1016/j.nima.2008.05.064.
    18. B. Zinßer, G. Makrides, M.B. Schubert, G. Georghiou, and J.H. Werner, “Temperature and Intensity Dependence of Twelve Photovoltaic Technologies”, in: Proc. 23rd Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich, Germany (2008), pp. 3249–3252, DOI: 10.4229/23rdEUPVSEC2008-5AO.7.5.
  10. 2007

    1. C. Ehling, M.B. Schubert, R. Merz, J. Müller, M. Hlusiak, P.J. Rostan, and J.H. Werner, “0.4 % Efficiency Gain by Novel Back Contact”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 404–405.
    2. M. Reuter, W. Brendle, O. Tobail, and J.H. Werner, “17% Efficient 50 µm Thick Solar Cells”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf, Fukuoka, Japan (2007).
    3. P.J. Rostan, J. Maier, T. Kirchartz, U. Rau, F. Einsele, R. Merz, M.B. Schubert, and J.H. Werner, “a-Si:H/c-Si Heterojunction Solar Cells on p-type c-Si Wafers”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 393–394.
    4. B. Zinßer, G. Makrides, W. Schmitt, G.E. Georghiou, and J.H. Werner, “Annual Energy Yield of 13 Photovoltaic Technologies in Germany and in Cyprus”, in: 22nd Europ. Photovolt. Solar En. Conf., WIP, Munich (2007), p. 3114.
    5. B. Zinßer, W. Schmitt, and J.H. Werner, “Betrieb und Energieerträge von 12 verschiedenen Photovoltaik-Technologien in Deutschland und Zypern”, in: Proc. 22. Symp. PV Solarenergie, OTTI, Regensburg (2007), p. 61/A13.
    6. J. Mattheis, P.J. Rostan, U. Rau, and J.H. Werner, “Carrier collection in Cu(In,Ga)Se_2 solar cells with graded band gaps and transparent ZnO:Al back contacts”, Solar Energy Materials and Solar Cells 91, 689 (2007), DOI: http://dx.doi.org/10.1016/j.solmat.2006.12.014.
    7. K. Taretto, U. Rau, and J.H. Werner, “Closed-form expression for the current/voltage characteristics of pin solar cells”, Applied Physics a-Materials Science & Processing 86, 151 (2007), DOI: DOI 10.1007/s00339-006-3696-8.
    8. T. Kirchartz, U. Rau, M. Kurth, J. Mattheis, and J.H. Werner, “Comparative study of electroluminescence from Cu(In,Ga)Se_2 and Si solar cells”, Thin Solid Films 515, 6238 (2007), DOI: http://dx.doi.org/10.1016/j.tsf.2006.12.105.
    9. R. Merz, M.B. Schubert, and J.H. Werner, “Dynamic Electronic Interconnection of Photovoltaic Modules”, in: Proc. 22nd Europ. Photovolt. Solar En. Conf., edited by G. Willeke, O. H. and P. Helm, WIP, Munich, Germany (2007), pp. 2815–2818.
    10. P. Jackson, R. Würz, U. Rau, J. Mattheis, M. Kurth, T. Schlötzer, G. Bilger, and J.H. Werner, “High quality baseline for high efficiency, Cu(In_1−x,Ga_x)Se_2 solar cells”, Progress in Photovoltaics: Research and Applications 15, 507 (2007), DOI: 10.1002/pip.757.
    11. M. Ametowobla, J.R. Köhler, A. Esturo-Breton, and J.H. Werner, “Improved Laser Doping for Silicon Solar Cells”, in: Proc. 22nd Europ. Photovolt. Solar En. Conf., WIP, Munich (2007), p. 1403.
    12. R. Merz, M.B. Schubert, G. Bilger, and J.H. Werner, “In-Situ Series Connection of Solar Cells”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 971–972.
    13. C. Carlsson, A. Esturo-Breton, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Laser Doping of Textured Monocrystalline Silicon Wafers”, in: Proc. 22nd Europ. Photovolt. Solar En. Conf., WIP, Munich (2007), p. 1593.
    14. J. Mattheis, U. Rau, and J.H. Werner, “Light absorption and emission in semiconductors with band gap fluctuations - A study on Cu(In,Ga)Se_2 thin films”, Journal of Applied Physics 101, 1 (2007), DOI: http://dx.doi.org/10.1063/1.2721768.
    15. G. Makrides, B. Zinßer, G. Georghiou, and J.H. Werner, “Performance Assessment of Different Photovoltaic Systems under Indentical Field Conditions of High Irradiation”, in: Proc. Renewable Energy Sources & Energy Efficiency Conference, Nicosia, Cyprus (2007), pp. 1–7.
    16. C. Carlsson, J.R. Köhler, and J.H. Werner, “Pulsed Laser-Doped Selective Emitter for Silicon Solar Cells”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 538–539.
    17. O. Tobail, M. Reuter, S. Eisele, and J.H. Werner, “Selective Electrochemical Etching for Layer Transfer”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf, Fukuoka, Japan (2007), pp. 713–714.
    18. S. Eisele, G. Bilger, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Sputtered Phosphorous Precursors for Laser Doping”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 715–716.
    19. G. Makrides, B. Zinßer, G.E. Georghiou, M. Schubert, and J.H. Werner, “Temperature Behaviour of Different Photovoltaic Systems Installed in Cyprus and Germany”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 385–386.
    20. M. Patsalides, D. Evagorou, G. Mikrides, Z. Achillides, G. Georghiou, A. Stavrou, V. Efthimiou, B. Zinßer, W. Schmitt, and J.H. Werner, “The Effect of Solar Irradiance on the Power Quality Behaviour of Grid Connected Photovoltaic Systems”, in: Intern. Conf. Renewable Energies and Power Quality (1), 5, (2007), pp. 323–330.
  11. 2006

    1. A. Esturo-Bretón, M. Ametowobla, C. Carlsson, J. Köhler, and J.H. Werner, “15.4% Efficiency Silicon Solar Cells with Laser Doped Emitter”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 1247–1249.
    2. C. Berge, M. Zhu, W. Brendle, M.B. Schubert, and J.H. Werner, “150-mm layer transfer for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells 90, 3102 (2006), DOI: http://dx.doi.org/10.1016/j.solmat.2006.06.040.
    3. W. Brendle, V.X. Nguyen, A. Grohe, E. Schneiderlöchner, U. Rau, G. Palfinger, and J.H. Werner, “20.5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts”, Progress in Photovoltaics: Research and Applications 14, 653 (2006), DOI: 10.1002/pip.696.
    4. M. Zimmermann, J.N. Burghartz, W. Appel, N. Remmers, C. Burwick, R. Wurz, O. Tobail, M. Schubert, G. Palfinger, and J. Werner, “A Seamless Ultra-Thin Chip Fabrication and Assembly Process”, in: Proc. 2006 Internat. Electron Devices Meeting, 1–2, (2006), pp. 1010–1012, DOI: 10.1109/IEDM.2006.346787.
    5. P.J. Rostan, C. Berge, U. Rau, and J.H. Werner, “Anodizing Method Yielding Multiple Porous Seed Layers for the Epitaxial Growth of Monocrystalline Si Films”, Journal of The Electrochemical Society 153, C133 (2006), DOI: 10.1149/1.2158569.
    6. M. Ametowobla, J. Köhler, A. Esturo-Bretón, and J.H. Werner, “Characterization of a Laser Doping Process for Crystalline Silicon Solar Cells”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 1440–1443.
    7. J. Mattheis, U. Rau, and J.H. Werner, “Finite Mobility Effects on the Radiative Efficiency Limit of Pn-Junction Solar Cells”, in: Proc. 4th World Conference on Photovoltaic Energy Conference WCPEC (1), IEEE, Piscataway (2006), pp. 95–98, DOI: 10.1109/WCPEC.2006.279372.
    8. M.B. Schubert and J.H. Werner, “Flexible solar cells for clothing”, Materials Today 9, 42 (2006), DOI: http://dx.doi.org/10.1016/S1369-7021(06)71542-5.
    9. A. Calderón, C. Martínez-Rivero, F. Matorras, T. Rodrigo, M. Sobrón, I. Vila, A.L. Virto, J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, J.M. Luque, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, C. Köhler, B. Lutz, M.B. Schubert, and J.H. Werner, “Large-size high-performance transparent amorphous silicon sensors for laser beam position detection”, Nuclear Instruments and Methods in Physics Research A 565, 603 (2006), DOI: 10.1016/j.nima.2006.06.021.
    10. C. Carlsson, A. Esturo-Bretón, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Laser Doping for Selective Silicon Solar Cell Emitter”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 938–940.
    11. P.J. Rostan, U. Rau, V.X. Nguyen, T. Kirchartz, M.B. Schubert, and J.H. Werner, “Low-temperature a-Si:H/ZnO/Al back contacts for high-efficiency silicon solar cells”, Solar Energy Materials and Solar Cells 90, 1345 (2006), DOI: http://dx.doi.org/10.1016/j.solmat.2005.11.010.
    12. P.O. Grabitz, U. Rau, B. Wille, G. Bilger, and J.H. Werner, “Spatial inhomogeneities in Cu(In,Ga)Se_2 solar cells analyzed by an electron beam induced voltage technique”, Journal of Applied Physics 100, 124501 (2006), DOI: 10.1063/1.2402345.
    13. P.O. Grabitz, U. Rau, B. Wille, G. Bilger, and J.H. Werner, “Spatial Inhomogeneities in Cu(In,Ga)Se_2 Solar Cells Analyzed by Electron Beam Induced Voltage Technique”, in: 2006 IEEE 4th World Conference on Photovoltaic Energy Conference (1), IEEE, Piscataway (2006), pp. 424–427, DOI: 10.1109/WCPEC.2006.279480.
    14. P.J. Rostan, U. Rau, and J.H. Werner, “TCO/(N-Type)A-Si:H(P-Type)C-Si Heterojunction Solar Cells with High Open Circuit Voltage”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 1181–1184.
    15. G. Hanna, T. Glatzel, S. Sadewasser, N. Ott, H.P. Strunk, U. Rau, and J.H. Werner, “Texture and electronic activity of grain boundaries in Cu(In,Ga)Se_2 thin films”, Appl. Phys. A 1 (2006).
  12. 2005

    1. P.J. Rostan, U. Rau, V.X. Nguyen, T. Kirchartz, M.B. Schubert, and J.H. Werner, “21 % efficient Si solar cell using a low-temperature a-Si:H back contact”, in: Proc. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, edited by B.L. Sopori, NREL, Golden, CO, (2005), pp. 158–161.
    2. P.J. Rostan, U. Rau, V.X. Nguyen, T. Kirchartz, M. Schubert, and J.H. Werner, “21% efficient Si solar cell using a low-temperature a-Si:H/ZnO back contact”, in: Techn. Digest 15th Int. Photovoltaic Science and Engineering Conference, edited by Y. Quinhao, Shanghai Scientific & Technical Publishers, Shanghai, China, (2005), p. 214.
    3. P.O. Grabitz, U. Rau, and J.H. Werner, “A multi-diode model for spatially inhomogeneous solar cells”, Thin Solid Films 487, 14 (2005), DOI: http://dx.doi.org/10.1016/j.tsf.2005.01.027.
    4. J. Mattheis, T. Schlenker, U. Rau, J.H. Werner, and M. Bogicevic, “Band gap fluctuations in Cu(In,Ga)Se_2 thin films”, MRS Proceedings 865, F16. 4 (2005).
    5. M.B. Schubert, Y. Ishikawa, J.W. Kramer, C.E.M. Gemmer, and J.H. Werner, “Clothing integrated photovoltaics”, in: Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, IEEE, New York (2005), pp. 1488–1491, DOI: 10.1109/PVSC.2005.1488424.
    6. J.H. Werner, J. Mattheis, and U. Rau, “Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se_2”, Thin Solid Films 480481, 399 (2005), DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.052.
    7. P. Grabitz, U. Rau, and J.H. Werner, “Electronic Inhomogeneities and the Role of the Intrinsic ZnO Layer in Cu(In,Ga)Se_2 Thin-Film Solar Cells”, in: Proc. 20th European Photovoltaic Solar Energy Conference, WIP, München (2005), pp. 1771–1774.
    8. P.J. Rostan, C. Berge, U. Rau, and J.H. Werner, “Epitaxial Mono-crystalline Si Thin-films Grown on Self Standing Porous Si Seed Layers for Solar Cells”, Shanghai Scientific & Technical Publishers, Shanghai, China (2005), pp. 628–629.
    9. P.J. Rostan, J. Mattheis, G. Bilger, U. Rau, and J.H. Werner, “Formation of transparent and ohmic ZnO:Al/MoSe_2 contacts for bifacial Cu(In,Ga)Se_2 solar cells and tandem structures”, Thin Solid Films 480481, 67 (2005), DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.001.
    10. A. Virtuani, E. Lotter, M. Powalla, U. Rau, J.H. Werner, and M. Acciarri, “Influence of Cu content on electronic transport and shunting behavior of Cu(In,Ga)Se_2 solar cells”, Journal of Applied Physics 99, (2005), DOI: http://dx.doi.org/10.1063/1.2159548.
    11. O. Tobail, P. Khanna, P.J. Rostan, K. Brenner, M. Schubert, and J.H. Werner, “Integrated Photovoltaic Mini-Modules of Thin-Film Mono-Crystalline Silicon Solar Cells”, in: Proc. 2nd Int. Conference on Advances in Engineering Sciences and Technologies, Cairo, Egypt (2005), pp. 96–102.
    12. A. Esturo-Bretón, M. Ametowobla, J. Köhler, and J.H. Werner, “Laser Doping for Crystalline Silicon Solar Cell Emitters”, in: Proc. 20th European Photovoltaic Solar Energy Conference, WIP, München (2005), pp. 851–854.
    13. M. Ametowabla, A. Esturo-Breton, J.R. Kohler, and J.H. Werner, “Laser processing of crystalline silicon solar cells”, in: Proc. 31st IEEE PVSEC, IEEE, Piscataway (2005), pp. 1277–1280, DOI: 10.1109/PVSC.2005.1488373.
    14. W. Brendle, V. Nguyen, K. Brenner, P. Rostan, A. Grohe, E. Schneiderlöchner, R. Preu, U. Rau, G. Palfinger, and J.H. Werner, “Low Temperature Back Contact for High Efficiency Silicon Solar Cells”, in: Proc. 20th European Photovoltaic Solar Energy Conference, WIP, München (2005), pp. 745–748.
    15. P.O. Grabitz, U. Rau, and J.H. Werner, “Modeling of spatially inhomogeneous solar cells by a multi-diode approach”, physica status solidi (a) 202, 2920 (2005), DOI: 10.1002/pssa.200521205.
    16. K. Taretto, U. Rau, and J.H. Werner, “Numerical simulation of grain boundary effects in Cu(In,Ga)Se_2 thin-film solar cells”, Thin Solid Films 480481, 8 (2005), DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.043.
    17. T. Schlenker, J. Mattheis, M. Bogicevic, U. Rau, and J.H. Werner, “Optical Analysis of Band Gap Inhomogeneities in CuInSe_2 Thin Films”, in: Proc. 20th European Photovoltaic Solar Energy Conference, WIP, München (2005), pp. 1775–1778.
    18. J. Köhler, U. Rau, M. Schubert, and J.H. Werner, “Photons and photonics in solar cells and photodiodes”, in: Themenheft Forschung „Photonics“, Univ. Stuttgart, (2005), pp. 96–103.
    19. C. Carlsson, M. Schubert, and J.H. Werner, “Static V-Through Concentrators under Stuttgart Insolation Conditions”, in: Proc. 20th European Photovoltaic Solar Energy Conference, edited by W. Palz, H. Ossenbrink and W. Helm, WIP, München (2005), pp. 2418–2421.
    20. T. Schlenker, V. Laptev, H.W. Schock, and J.H. Werner, “Substrate influence on Cu(In,Ga)Se_2 film texture”, Thin Solid Films 480481, 29 (2005), DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.034.
  13. 2004

    1. M. Dürr, G. Kron, U. Rau, J.H. Werner, A. Yasuda, and G. Nelles, “Diffusion-limited transport of I^-_3 through nanoporous TiO_2-polymer gel networks”, The Journal of Chemical Physics 121, 11374 (2004), DOI: http://dx.doi.org/10.1063/1.1812741.
    2. T. Schlenker, M.L. Valero, H.. Schock, and J.. Werner, “Grain growth studies of thin Cu(In, Ga)Se_2 films”, Journal of Crystal Growth 264, 178 (2004), DOI: http://dx.doi.org/10.1016/j.jcrysgro.2004.01.020.
    3. A. Virtuani, E. Lotter, M. Powalla, U. Rau, and J.H. Werner, “Highly resistive Cu(In,Ga)Se_2 absorbers for improved low-irradiance performance of thin-film solar cells”, Thin Solid Films 451452, 160 (2004).
    4. U. Rau and J.H. Werner, “Radiative efficiency limits of solar cells with lateral band-gap fluctuations”, Applied Physics Letters 84, 3735 (2004), DOI: http://dx.doi.org/10.1063/1.1737071.
    5. U. Rau, P.O. Grabitz, and J.H. Werner, “Resistive limitations to spatially inhomogeneous electronic losses in solar cells”, Applied Physics Letters 85, 6010 (2004), DOI: http://dx.doi.org/10.1063/1.1835536.
    6. J.H. Werner, “Second and Third Generation Phototvoltaics – Dreams and Reality”, in Advances in Solid State Physics 44, edited by B. Kramer (Springer-Verlag, Berlin Heidelberg, 2004), pp. 51–66.
    7. J.H. Werner, “Stromerzeugung mit Solarzellen”, Nova Acta Leopoldina (NF 91) 339, 65 (2004).
    8. N. Ott, G. Hanna, U. Rau, J.H. Werner, and H.P. Strunk, “Texture of Cu(In,Ga)Se_2 thin films and nanoscale cathodoluminescence”, Journal of Physics: Condensed Matter 16, S85 (2004).
  14. 2003

    1. K. Taretto, U. Rau, T.A. Wagner, and J.H. Werner, “A simple method to extract the diffusion length from the output parameters of solar cells - application to polycrystalline silicon”, Solid State Phenomena 93, 399 (2003), DOI: 10.4028/www.scientific.net/ssp.93.399.
    2. K. Orgassa, H.W. Schock, and J.H. Werner, “Alternative back contact materials for thin film Cu(In,Ga)Se_2 solar cells”, Thin Solid Films 431432, 387 (2003), DOI: http://dx.doi.org/10.1016/S0040-6090(03)00257-8.
    3. N. Ott, G. Hanna, M. Albrecht, U. Rau, J.H. Werner, and H.P. Strunk, “Cathodoluminescence Studies of Cu(In,Ga)Se_2 Thin-Films”, Solid State Phenomena 93, 133 (2003), DOI: 10.4028/www.scientific.net/ssp.93.133.
    4. K. Taretto, U. Rau, and J.H. Werner, “Closed-form expression for the current / voltage characteristics of pin solar cells”, App. Phys. 77, 865 (2003).
    5. G. Kron, U. Rau, K. Taretto, M. Dürr, T. Miteva, G. Nelles, A. Yasuda, and J.H. Werner, “Determination of the Effective Diffusion Constant of I3- Ions in Nanoporous TiO_2 Networks”, in: WCPEC-3 3rd World Conference on Photovoltaic Energy Conversion, Osaka (2003).
    6. G. Kron, U. Rau, M. Dürr, T. Miteva, G. Nelles, A. Yasuda, and J.H. Werner, “Diffusion Limitations to I_3^−/I^− Electrolyte Transport Through Nanoporous TiO_2 Networks”, Electrochemical and solid-state letters 6, E11 (2003).
    7. G. Kron, G. Nelles, T. Miteva, A. Yasuda, J.H. Werner, and U. Rau, “Electronic Transport in Dye-Sensitized Nanoporous TiO_2 Solar CellsComparison of Electrolyte and Solid-State Devices”, The Journal of Physical Chemistry B 107, 3556 (2003), DOI: 10.1021/jp0222144.
    8. C. Berge, T.A. Wagner, W. Brendle, C. Craff-Castillo, M. Schubert, and J.H. Werner, “Flexible monocrystalline Si films for thin film devices from transfer processes”, MRS Proceedings 769, H2.7.1 (2003), DOI: 10.1557/PROC-769-H2.7.
    9. A. Jasenek, U. Rau, K. Weinert, H.W. Schock, and J.H. Werner, “Illumination-induced recovery of Cu(In,Ga)Se_2 solar cells after high-energy electron irradiation”, Applied Physics Letters 82, 1410 (2003), DOI: http://dx.doi.org/10.1063/1.1559648.
    10. G. Kron, U. Rau, and J.H. Werner, “Influence of the Built-in Voltage on the Fill Factor of Dye-Sensitized Solar Cells”, The Journal of Physical Chemistry B 107, 13258 (2003), DOI: 10.1021/jp036039i.
    11. T. Schlenker, H.W. Schock, and J.H. Werner, “Initial growth behavior of Cu(In,Ga)Se_2 on molybdenum substrates”, Journal of Crystal Growth 259, 47 (2003), DOI: http://dx.doi.org/10.1016/S0022-0248(03)01582-3.
    12. T.A. Wagner, L. Oberbeck, R.B. Bergmann, M. Nerding, H.P. Strunk, and J.H. Werner, “Low-Temperature Epitaxy on Polycrystalline Silicon Substrates”, Solid State Phenomena 93, 121 (2003), DOI: 10.4028/www.scientific.net/ssp.93.121.
    13. K. Taretto, U. Rau, and J.H. Werner, “Method to extract diffusion length from solar cell parameters - Application to polycrystalline silicon”, Journal of Applied Physics 93, 5447 (2003), DOI: http://dx.doi.org/10.1063/1.1565676.
    14. G. Hanna, S. Schleussner, G. Bilger, H.W. Schock, U. Rau, and J.H. Werner, “Na Diffusion in the Cu(In,Ga)Se_2-MO-Glass System”, in: WCPEC-3 3rd World Conference on Photovoltaic Energy Conversion, Osaka (2003).
    15. T. Schlenker, K. Orgassa, H.W. Schock, and J.H. Werner, “Nucleation of Cu(In,Ga)Se_2 on Molybdenum Substrates”, MRS Proceedings 763, B8.7 (2003), DOI: 10.1557/PROC-763-B8.7.
    16. K. Orgassa, U. Rau, H.-W. Schock, and J.H. Werner, “Optical Constants of Cu(In,Ga)Se_2 Thin Films from Normal Incidence Transmittance and Reflectance”, in: WCPEC-3 3rd World Conference on Photovoltaic Energy Conversion, Osaka (2003), p. 372.
    17. A. Jasenek, U. Rau, K. Weinert, H.W. Schock, and J.H. Werner, “Radiation Response of Cu(In,Ga)Se_2 Solar Cells”, in: WCPEC-3 3rd World Conference on PHotovoltaic Energy Conversion, Osaka (2003), pp. 593–598.
    18. J.H. Werner, T. Wagner, C. Gemmer, C. Berge, W. Brendle, and M. Schubert, “Recent progress on transfer-Si solar cells at ipe Stuttgart”, in: Proc. 3rd World Conf. Photovolt. Energy Conv., Osaka, Japan, 2003, IEEE catalog no. 03CH37497, ISBN 4-9901816-1-1, (2003), p. 1272.
    19. U. Rau, V. Nguyen, J. Mattheis, M. Rakhlin, and J.H. Werner, “Recombination at a-Si:H/c-Si Heterointerfaces and in a-Si:H/c-Si Heterojunciton Solar Cells”, in: WCPEC-3 3rd World Conference on Photovoltaic Energy Conversion, Osaka (2003), pp. 1124–1127.
    20. U. Rau, G. Kron, and J.H. Werner, “Reply to Comments on ‘Electronic Transport in Dye-Sensitized Nanoporous TiO_2 Solar CellsComparison of Electrolyte and Solid-State Devices’. On the Photovoltaic Action in pn-Junction and Dye-Sensitized Solar Cells”, The Journal of Physical Chemistry B 107, 13547 (2003), DOI: 10.1021/jp036050i.
  15. 2002

    1. R.. Bergmann, C. Berge, T.. Rinke, J. Schmidt, and J.. Werner, “Advances in monocrystalline Si thin film solar cells by layer transfer”, Solar Energy Materials and Solar Cells 74, 213 (2002), DOI: http://dx.doi.org/10.1016/S0927-0248(02)00070-3.
    2. K. Brühne, M.B. Schubert, and J.H. Werner, “Band-tail photoluminescence in nanocrystalline silicon thin films”, 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process, Denver, USA (2002).
    3. M.R. Balboul, U. Rau, G. Bilger, M. Schmidt, H.W. Schock, and J.H. Werner, “Control of secondary phase segregations during CuGaSe_2 thin-film growth”, Journal of Vacuum Science & Technology A 20, 1247 (2002), DOI: http://dx.doi.org/10.1116/1.1481039.
    4. J.H. Werner, M.B. Schubert, and et al., “Dünnschichtsolarzellen aus kristallinem Silicium auf Glassubstraten”, Abschlussbericht FKZ 032-9818 (2002).
    5. G. Kron, T. Egerter, G. Nelles, A. Yasuda, J.H. Werner, and U. Rau, “Electrical characterisation of dye sensitised nanocrystalline TiO_2 solar cells with liquid electrolyte and solid-state organic hole conductor”, Thin Solid Films 403404, 242 (2002), DOI: http://dx.doi.org/10.1016/S0040-6090(01)01590-5.
    6. A. Jasenek, U. Rau, K. Weinert, H.W. Schock, and J.H. Werner, “Illumination-enhanced annealing of electron-irradiated Cu(In,Ga)Se_2 solar cells”, in: Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE, (2002), pp. 872–875, DOI: 10.1109/PVSC.2002.1190718.
    7. G. Kron, G. Nelles, T. Miteva, A. Yasuda, J.H. Werner, and U. Rau, “Junction admittance of dye sensitized nanoporous TiO_2 solar cells”, in: Meeting Abstracts of the 201st Centennial Meeting of the Electrochemical Society (202–1), (2002), p. 1054.
    8. M. Nerding, R. Dassow, S. Christiansen, J.R. Köhler, J. Krinke, J.H. Werner, and H.-P. Strunk, “Microstructure of laser-crystallized silicon thin films on glass substrate”, Journal of Applied Physics 91, 4125 (2002), DOI: http://dx.doi.org/10.1063/1.1454189.
    9. N. Jensen, R.M. Hausner, R.B. Bergmann, J.H. Werner, and U. Rau, “Optimization and characterization of amorphous/crystalline silicon heterojunction solar cells”, Progress in Photovoltaics: Research and Applications 10, 1 (2002), DOI: 10.1002/pip.398.
    10. J.H. Werner and F. Pfisterer, “Photovoltaik”, in Energiehandbuch – Gewinnung, Wandlung und Nutzung von Energie, edited by E. Rebhan (Springer-Verlag, Heidelberg, 2002), pp. 316–364.
    11. K. Orgassa, U. Rau, Q. Nguyen, H. Werner Schock, and J.H. Werner, “Role of the CdS buffer layer as an active optical element in Cu(In,Ga)Se_2 thin-film solar cells”, Progress in Photovoltaics: Research and Applications 10, 457 (2002), DOI: 10.1002/pip.438.
    12. R.. Bergmann and J.. Werner, “The future of crystalline silicon films on foreign substrates”, Thin Solid Films 403404, 162 (2002), DOI: http://dx.doi.org/10.1016/S0040-6090(01)01556-5.
  16. 2001

    1. R.B. Bergmann, T.J. Rinke, C. Berge, J. Schmidt, and J.H. Werner, “Advances in Monocrystalline Si Thin Film Solar Cells by Layer Transfer”, in: 12th Int. Photovoltaic Science and Engineering Conference, Cheju, Korea, 11.-15.6.2001, (2001), p. Ms 2.5.
    2. K. Weinert, U. Rau, A. Jasenek, H.W. Schock, J.H. Werner, M. Yakushev, B. Schattat, and W. Bolse, “Analysis and Modelling of Electron and Proton Irradiation Effects in Cu(In,Ga)Se_2 Solar Cells”, in: Proc. 17th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James (Science Publishers) Ltd., London, United Kingdom (2001), pp. 2167–2170.
    3. T. Dullweber, O. Lundberg, J. Malmström, M. Bodegård, L. Stolt, U. Rau, H.W. Schock, and J.H. Werner, “Back surface band gap gradings in Cu(In,Ga)Se_2 solar cells”, Thin Solid Films 387, 11 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01726-0.
    4. J.H. Werner and R.B. Bergmann, “Crystalline Silicon Thin Films Solar Cells”, in: Techn. Dig. Int. PVSEC12, Jeju, Korea (2001), pp. 69–72.
    5. A. Jasenek, H.W. Schock, J.H. Werner, and U. Rau, “Defect annealing in Cu(In,Ga)Se_2 heterojunction solar cells after high-energy electron irradiation”, Applied Physics Letters 79, 2922 (2001), DOI: http://dx.doi.org/10.1063/1.1415345.
    6. Q. Nguyen, U. Rau, M. Mamor, K. Orgassa, S. H.-W., and J.H. Werner, “Electrical Metastabilities in Cu(In,Ga)Se_2-based Solar Cells with In_x(OH,S)_γ, CdS and Combined Buffer Layers”, in: Proc. 17th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James (Science Publishers) Ltd., London, United Kingdom (2001), pp. 1107–1110.
    7. U. Rau, N. Jensen, and J.H. Werner, “Electronic Transport in Amorphous / Crystalline Silicon Heterojunction Solar Cells”, in: 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, edited by B. Sopori, NREL, Golden, Colorado (2001), pp. 49–56.
    8. J.H. Werner, R. Dassow, T.J. Rinke, J.R. Köhler, and R.B. Bergmann, “From polycrystalline to single crystalline silicon on glass”, Thin Solid Films 383, 95 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01788-0.
    9. U. Rau, T. Dullweber, M. Turcu, I.M. Kötschau, H.W. Schock, and J.H. Werner, “Graded Bandgap Solar Cells - Basic Aspects and Realizations in I-III-VI2 Compounds”, in: Presented at: Workshop "The Path to Ultra High Efficient Solar Cells, Joint Research Centre of the European Commission, Ispra (2001), pp. 1039–1042.
    10. J.H. Werner, K. Taretto, and U. Rau, “Grain Boundary Recombination in Thin-Film Silicon Solar Cells”, Solid State Phenomena 8081, 299 (2001), DOI: 10.4028/www.scientific.net/ssp.80-81.299.
    11. M. Nerding, S. Christiansen, J. Krinke, R. Dassow, J.R. Köhler, J.-H. Werner, and H.-P. Strunk, “Grain populations in laser-crystallised silicon thin films on glass substrates”, Thin Solid Films 383, 110 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01623-0.
    12. Y. Helen, R. Dassow, M. Nerding, K. Mourgues, F. Raoult, J.R. Köhler, T. Mohammed-Brahim, R. Rogel, O. Bonnaud, J.H. Werner, and H.P. Strunk, “High mobility thin film transistors by Nd:YVO_4-laser crystallization”, Thin Solid Films 383, 143 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01586-8.
    13. T.A. Wagner, L. Oberbeck, R.B. Bergmann, and J.H. Werner, “Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?”, Solid State Phenomena 8081, 95 (2001), DOI: 10.4028/www.scientific.net/ssp.80-81.95.
    14. C. Koch, M. Ito, M.B. Schubert, and J.H. Werner, “Low Temperature Deposition of Amorphous Silicon Solar Cells”, Solar Energy Materials and Solar Cells 68, 227 (2001), DOI: 10.1016/S0927-0248(00) 00249-X.
    15. R.B. Bergmann, C. Berge, T.J. Rinke, and J.H. Werner, “Monocrystalline Si Films from Transfer Processes for Thin Film Devices”, MRS Proceedings 685, D2.1.1. (2001), DOI: 10.1557/PROC-106-53.
    16. C. Berge, R.B. Bergmann, T.J. Rinke, and J.H. Werner, “Monocrystalline Silicon Thin Film Solar Cells by Layer Transfer”, in: Proc. 17th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James (Science Publishers) Ltd., London, United Kingdom (2001), pp. 1277–1281.
    17. K. Brühne, M.B. Schubert, C. Köhler, and J.H. Werner, “Nanocrystalline silicon from hot-wire deposition — a photovoltaic material?”, Thin Solid Films 395, 163 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(01)01250-0.
    18. T.J. Rinke, K. Orgassa, G. Hanna, H.W. Schock, and J.H. Werner, “Novel Self-aligning Series-interconnection Technology for Thin Film Solar Modules”, in: Proc. 17th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James (Science Publishers) Ltd., London, United Kingdom (2001), pp. 474–477.
    19. J.R. Köhler, R. Dassow, and J.H. Werner, “Numerical Modeling of High Repetition Rate Pulsed Laser Crystallization of Silicon Films on Glass”, MRS Proceedings 695, D10.3.1 (2001), DOI: 10.1557/PROC-685-D10.3.1.
    20. K. Orgassa, Q. Nguyen, I. Kötschau, U. Rau, H.-W. Schock, and J.H. Werner, “Optimized Reflection of CdS/ZnO Window Layers in Cu(In,Ga)Se_2 Thin Film Solar Cells”, in: Proc. 17th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James (Science Publishers) Ltd., London, United Kingdom (2001), pp. 1039–1042.
    21. A. Jasenek, U. Rau, K. Weinert, I.M. Kötschau, G. Hanna, G. Voorwinden, M. Powalla, H.W. Schock, and J.H. Werner, “Radiation resistance of Cu(In,Ga)Se_2 solar cells under 1-MeV electron irradiation”, Thin Solid Films 387, 228 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01847-2.
    22. M. Ito, C. Koch, V. Svrcek, M.B. Schubert, and J.H. Werner, “Silicon thin film solar cells deposited under 80 °C”, Thin Solid Films 383, 129 (2001), DOI: 10.1016/S0040-6090(00)01590-X.
    23. R.. Bergmann, T.. Rinke, T.. Wagner, and J.. Werner, “Thin film solar cells on glass based on the transfer of monocrystalline Si films”, Solar Energy Materials and Solar Cells 65, 355 (2001), DOI: http://dx.doi.org/10.1016/S0927-0248(00)00113-6.
    24. K. Taretto, U. Rau, and J.H. Werner, “Two-Dimensional Simulations of Microcrystalline Silicon Solar Cells”, in Polycrystalline Semiconductors VI – Bulk Materials, Thin Films, and Devices, edited by O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner (Trans Tech Publications, Zürich, 2001), pp. 311–316.
    25. J.H. Werner, R.B. Bergmann, and J.R. Köhler, “Von polykristallinem zu einkristallinem Silicium auf Glas”, in: Konferenz Beschichtungstechnik und Materialien für Flachdisplays, fds, Workshop Deutsches Flachdisplay-Forum 10. April 2001, Frankfurt am Main (2001).
  17. 2000

    1. A. Jasenek, U. Rau, T. Hahn, G. Hanna, M. Schmidt, M. Hartmann, H.W. Schock, J.H. Werner, B. Schattat, S. Kraft, K.-H. Schmid, and W. Bolse, “Defect Generation in Polycrystalline Cu(In,Ga)Se_2 by High-Energy Electron Irradiation”, Appl. Phys. A. 70, 677 (2000), DOI: 10.1007/PL00021081.
    2. T.J. Rinke, R.B. Bergmann, and J.H. Werner, “Efficient Thin Film Solar Cells by Transfer of Monocrystalline Si Layers”, in: 16th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H.A. Ossenbrink and P. Helm, James & James Science Publishers Ltd., London, UK (2000), pp. 1128–1131.
    3. N. Jensen, U. Rau, R.M. Hausner, S. Uppal, L. Oberbeck, R.B. Bergmann, and J.H. Werner, “INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)-Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells”, Journal of Applied Physics 87, 2639 (2000).
    4. R. Dassow, J.R. Köhler, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and J.H. Werner, “Laser Crystallization of Silicon for High-performance Thin-film Transistors”, Semicond. Sci. Technol. 15, 31 (2000).
    5. R.B. Bergmann, T.J. Rinke, and J.H. Werner, “Monocrystalline Si Thin Film Solar Cells: A New Era for Thin Film Photovoltaics?”, in: 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes, edited by B.L. Sopori, NREL, Golden, Colorado (2000), pp. 125–128.
    6. R. Dassow, J.R. Köhler, M. Nerding, H.P. Strunk, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and J.H. Werner, “Nd:YVO_4 Laser Crystallization for Thin Film Transistors with a High Mobility”, MRS Proceedings 621, 1 (2000), DOI: 10.1557/PROC-621-Q9.3.1.
    7. J.H. Werner, “Perspectives of Crystalline Silicon Thin Film Solar Cells”, in: Techn. Digest of 13th Sunshine Workshop on Thin Film Solar Cells, edited by M. Konagai, NEDO, Tokyo (2000), pp. 41–48.
    8. J.H. Werner, “Polycrystalline and Single Crystalline Silicon for Thin Film Applications”, in: Int. Workshop on Active-Matrix Liquid-Crystal Displays, Tokyo, AM-LCD 2000, Tokyo, Japan (2000), pp. 73–76.
    9. C. Koch, M. Ito, V. Svrecek, M.B. Schubert, and J.H. Werner, “Protocrystalline Growth of Silicon below 80 °C”, MRS Proceedings 609, A15.6 (2000), DOI: 10.1557/PROC-609-A15.6.
    10. C. Koch, M.B. Schubert, and J.H. Werner, “Protocrystalline Growth of Silicon below 80 °C for Solar Cell Application”, in: Proc. 16th European Photovoltaic Solar Energy Conference, edited by H. Scheer, B. McNelis, W. Palz, H. Ossenbrink and P. Helm, James & James, London, UK (2000), pp. 401–404.
    11. U. Rau, A. Jasenek, H.W. Schock, J.H. Werner, G.L. Roche, A. Robben, and K. Bogus, “Radiation Induced Defects in Cu(In,Ga)Se_2 - Comparison of Electron and Proton Irradiation”, in: Proc. 28th IEEE Photovolt. Specialists Conf., IEEE, Piscataway, USA (2000), pp. 1032–1037, DOI: 10.1109/PVSC.2000.916063.
    12. N. Jensen, U. Rau, and J.H. Werner, “Recombination and Resistive Losses in Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells”, MRS Proceedings 609, 1 (2000), DOI: 10.1557/PROC-609-A13.1.
    13. N. Jensen, U. Rau, R.M. Hausner, S. Uppal, L. Oberbeck, R.B. Bergmann, and J.H. Werner, “Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells”, Journal of Applied Physics 87, 2639 (2000), DOI: http://dx.doi.org/10.1063/1.372230.
    14. R.B. Bergmann, T.J. Rinke, and J.H. Werner, “Solarzellen und Mikrochips von morgen”, Physikalische Blätter 56, 51 (2000).
    15. J.-F. Guillemoles, L. Kronik, U. Rau, A. Jasenek, and H.-W. Schock, “Stability Issues of Cu(In,Ga)Se_2-Based Solar Cells”, The Journal of Physical Chemistry B 104, 4849 (2000), DOI: 10.1021/jp993143k.
    16. A. Jasenek, T. Hahn, M. Schmidt, K. Weinert, M. Wimbor, G. Hanna, K. Orgassa, M. Hartmann, H.W. Schock, U. Rau, J.H. Werner, B. Schattat, S. Kraft, K.-H. Schmid, W. Bolse, G. La Roche, A. Robben, and K. Bogus, “Stability of CIGS Thin Film Solar Cells under 1 MeV Electron Radiation”, (2000), pp. 982–985.
  18. 1999

    1. U. Rau and J.H. Werner, “An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 553–558, DOI: 10.4028/www.scientific.net/SSP.67-68.553.
    2. R.M. Hausner, N. Jensen, R.B. Bergmann, U. Rau, and J.H. Werner, “Heterojunctions for Polycrystalline Silicon Solar Cells”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 571–576, DOI: 10.4028/www.scientific.net/SSP.67-68.571.
    3. J.R. Köhler, R. Dassow, R.B. Bergmann, J. Krinke, H.P. Strunk, and J.H. Werner, “Large-grained polycrystalline silicon on glass by copper vapor laser annealing”, Thin Solid Films 337, 129 (1999), DOI: 10.1016/S0040-6090(98)01173-0.
    4. R. Dassow, J.R. Köhler, M. Grauvogl, R.B. Bergmann, and J.H. Werner, “Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 193–198, DOI: 10.4028/www.scientific.net/SSP.67-68.193.
    5. C. Koch, M. Ito, M. Schubert, and J. Werner, “Low Temperature Deposition of Amorphous Silicon Based Solar Cells”, MRS Proceedings 557, 749 (1999), DOI: 10.1557/proc-557-749.
    6. L. Oberbeck, R.B. Bergmann, N. Jensen, S. Oelting, and J.H. Werner, “Low-Temperature Silicon Epitaxy by Ion-Assisted Deposition”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 459–464, DOI: 10.4028/www.scientific.net/SSP.67-68.459.
    7. M.B. Schubert, A. Hierzenberger, H.J. Lehner, and J.H. Werner, “Optimizing photodiode arrays for the use as Retinal Implants”, Sensors and Actuators 74, 193 (1999), DOI: https://doi.org/10.1016/S0924-4247(98)00313-6.
    8. J.H. Werner and R.B. Bergmann, “Perspectives of Crystalline Silicon Thin Film Solar Cells”, in: Techn. Digest 11th Photovoltaic Solar Energy Conference (Sapporo), (1999), pp. 923–925.
    9. T.J. Rinke, R.B. Bergmann, and J.H. Werner, “Quasi-Monocrystalline Silicon for Thin Film Devices”, Appl. Phys. A. 68, 705 (1999), DOI: 10.1007/s003390050964.
    10. Y. Helen, R. Dassow, K. Mourges, O. Bonnaud, T. Mohammed-Brahim, F. Raoult, J.R. Köhler, J.H. Werner, and D. Lemoine, “Reproducible High Field Effect Mobility Polysilicon Thin Film Transistors Involving Pulsed Nd:YVO_4 Laser Crystallization”, in: International Electron Devices Meeting 1999, Electron Devices Soc. IEEE, Piscataway, NJ, USA (1999), pp. 297–300.
    11. T.J. Rinke, R.B. Bergmann, and J.H. Werner, “Structure and Properties of Quasi-Monocrystalline Silicon Thin Films”, MRS Proceedings 251 (1999), DOI: 10.1557/PROC-558-251.
    12. R.B. Bergmann, T.J. Rinke, R.M. Hausner, M. Grauvogl, M. Vetter, and J.H. Werner, “Thin film solar cells on glass by transfer of monocrystalline Si films”, International Journal of Photoenergy 1, 83 (1999).
    13. R.B. Bergmann, T.J. Rinke, T.A. Wagner, and J.H. Werner, “Thin Film Solar Cells on Glass by Transfer of Quasi-Monocrystalline Si Films”, in: Technical Digest 11th Photovoltaic Solar Energy Conference (Sapporo), (1999), pp. 541–542.
    14. T.J. Rinke, R.B. Bergmann, R. Brüggemann, and J.H. Werner, “Ultrathin Quasi-Monocrystalline Silicon Films for Electronic Devices”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 229–234, DOI: 10.4028/www.scientific.net/SSP.67-68.229.
  19. 1998

    1. R.B. Bergmann, R.M. Hausner, N. Jensen, M. Grauvogl, L. Oberbeck, T.J. Rinke, M.B. Schubert, C. Zaczek, R. Dassow, J.R. Köhler, U. Rau, S. Oelting, J. Krinke, H.P. Strunk, and J.H. Werner, “High Rate, Low temperature Deposition of Crystalline Silicon Films for Thin Film Solar Cells on Glass”, in: Proc. 2nd World Conf. On Photovolt. Energy Conv., edited by J. Schmidt, H.A. Ossenbrink, P. Helm, H. Ehmann and E.D. Dunlop, E. C. Joint. Res. Centre, Luxembourg (1998), pp. 1260–1265.
    2. R.M. Hausner, R.B. Bergmann, and J.H. Werner, “Light Trapping and Amorphous/Crystalline Heterojunction for Silicon Thin Film Solar Cells on Texturized Glass”, in: Proc. 2nd World Conf. On Photovolt. Energy Conv., edited by J. Schmidt, H.A. Ossenbrink, P. Helm, H. Ehmann and E.D. Dunlop, E. C. Joint Res. Centre, Luxembourg (1998), pp. 1754–1757.
    3. R.B. Bergmann, C. Zaczek, N. Jensen, S. Oelting, and J.H. Werner, “Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition”, Appl. Phys. Lett. 72, 2996 (1998).
    4. R. Brendel, H. Artmann, S. Oelting, W. Frey, J.H. Werner, and H.J. Queisser, “Monocrystalline Si waffles for thin solar cells fabricated by the novel perforated-silicon process”, Appl. Phys. A 67, 151 (1998).
    5. R.B. Bergmann, J. Köhler, R. Dassow, C. Zaczek, and J.H. Werner, “Nucleation and Growth of Crystalline Silicon Films on Glass for Solar Cells”, Phys. Status Solidi A 166, 587 (1998), DOI: https://doi.org/10.1002/(SICI)1521-396X(199804)166:2<587::AID-PSSA587>3.0.CO;2-U.
    6. M. Wolf, R. Brendel, J.H. Werner, and H.J. Queisser, “Solar cell efficiency and carrier multiplication in Si_1-xGe_x alloys”, J. Appl. Phys. 83, 4213 (1998).
    7. R. Brendel, M. Schulz, D. Scholten, S. Oelting, J. Krinke, and J.H. Werner, “Waffle Cells Fabricated by the Perforated Silicon Process”, in: 2nd World Conf. on Photovoltaic Solar Energy Conversion, Proc. Intl. Conf. Vienna 6.-10.07.98, (1998), pp. 1242–1247.
  20. 1997

    1. J.K. Arch, R. Brendel, and J.H. Werner, “Contribution of Silicon Substrates to the Efficiencies of Silicon Thin Layer Solar Cells”, Solar Energy Materials and Solar Cells 309 (1997), DOI: 10.1016/S0927-0248(96)00074-8.
    2. R.B. Bergmann, J.G. Darrant, A.R. Hyde, and J.H. Werner, “Crystalline silicon films on a novel high temperature glass for applications in microelectronics and photovoltaics”, J. Non-Cryst. Solids 218, 388 (1997), DOI: 10.1016/S0022-3093(97)00245-7.
    3. R.B. Bergmann, J. Krinke, H.P. Strunk, and J.H. Werner, “Deposition and Characterization of Polycrystalline Silicon Films on Glass for Thin Solar Cells”, MRS Proceedings 467, 325 (1997).
    4. R. Plieninger, H.N. Wanka, J. Kühnle, and J.H. Werner, “Efficient defect passivation by hot-wire hydrogenation”, Applied Physics Letters 71, 2169 (1997), DOI: http://dx.doi.org/10.1063/1.119371.
    5. Q.-Y. Tong, T.-H. Lee, P. Werner, U. Gösele, R.B. Bergmann, and J.H. Werner, “Fabrication of Single Crystalline SiC Layer on High Temperature Glass”, J. Electrochem. Soc. 144, 111 (1997), DOI: 10.1149/1.1837628.
    6. R.B. Bergmann, R. Brendel, M. Wolf, P. Lölgen, J. Krinke, H.P. Strunk, and J.H. Werner, “Growth of polycrystalline silicon films on glass by high-temperature chemical vapor deposition”, Semiconductor Sci. Technol. 12, 224 (1997).
    7. R. Herberholz, H.W. Schock, U. Rau, J.H. Werner, T. Haalboom, T. Gödecke, F. Ernst, C. Beilharz, K.W. Benz, and D. Cahen, “New Aspects of Phase Segregation and Junction Formation in CuInSe_2”, in: Proc. 26th IEEE Photovolt. Spec. Conf., IEEE, Piscataway (1997), pp. 323–326, DOI: 10.1109/PVSC.1997.654093.
    8. J. Kühnle, R.B. Bergmann, S. Oelting, J. Krinke, H.P. Strunk, and J.H. Werner, “Polycrystalline Silicon Films on Glass for Solar Cells by Ion-Assisted Deposition”, in: Proc. 14th Europ. Photovolt. Solar Energy Conf., edited by H.A. Ossenbrink, P. Helm and H. Ehmann, H.S. Stephens & Ass., Bedford, UK (1997), pp. 1022–1025.
    9. J. Kühnle, R.B. Bergmann, and J.H. Werner, “Role of critical size of nuclei for liquid-phase epitaxy on polycrystalline Si films”, J. Crystal Growth 173, 62 (1997), DOI: 10.1016/S0022-0248(96)00783-X.
    10. R. Brendel, A. Gier, M. Mennig, H. Schmidt, and J.H. Werner, “Sol-Gel Coatings for Light Trapping in Crystalline Thin Film Silicon Solar Cells”, J. Non-Cryst. Solids 218, 391 (1997).
    11. R. Brendel, R.B. Bergmann, B. Fischer, J. Krinke, R. Plieninger, U. Rau, J. Reiß, H.P. Strunk, H. Wanka, and J.H. Werner, “Transport Analysis for Polycrystalline Silicon Solar Cells on Glass Substrates”, in: Proc. 26th IEEE Photovolt. Spec. Conf., IEEE, Piscataway (1997), pp. 635–638, DOI: 10.1109/PVSC.1997.654169.
    12. R. Brendel, R.B. Bergmann, P. Lölgen, M. Wolf, and J.H. Werner, “Ultrathin crystalline silicon solar cells on glass substrates”, Appl. Phys. Lett. 70, 390 (1997), DOI: doi: 10.1063/1.118421.
    13. R.B. Bergmann, C. Hebling, I. Ulmann, E. Bischoff, and J.H. Werner, “Zone-Melting Recrystallization of Silicon Films on Glass”, in: Proc. 14th Europ. Photovolt. Solar Energy Conf, edited by H.A. Ossenbrink, P. Helm and H. Ehmann, H.S. Stephens & Ass., Bedford, UK (1997), pp. 1464–1466.
  21. 1996

    1. G. Duscher, H. Müllejans, J.H. Werner, and M. Rühle, “Amorphous SiO_2 Precipitates at Silicon Grain Boundaries”, Mat. Science Forum 207209, 713 (1996), DOI: 10.4028/www.scientific.net/MSF.207-209.713.
    2. J. Kühnle, R.B. Bergmann, J. Krinke, and J.H. Werner, “Comparison of Vapor Phase and Liquid Phase Epitaxy for Deposition of Crystalline Si on Glass”, (1996), pp. 111–116, DOI: 10.1557/PROC-426-111.
    3. R.B. Bergmann, R. Brendel, M. Wolf, P. Lölgen, J.H. Werner, J. Krinke, and H.P. Strunk, “Crystalline Silicon Films by Chemical Vapor Deposition on Glass for Thin Film Solar Cells”, in: Proc. Conf. Record 25th IEEE Photovolt. Spec. Conf., IEEE, Piscataway (1996), pp. 365–370, DOI: 10.1109/PVSC.1996.564021.
    4. S. Pizzini, H.P. Strunk, and J.H. Werner, “Diffusion and Defect Data: Solid state phenomena”, (1996).
    5. R. Plieninger, H. Morikawa, S. Arimoto, P. Lölgen, M. Wolf, R. Brendel, T. Ishihara, K. Namba, and J.H. Werner, “Electrical Characterization of VEST Thin Silicon Solar Cells”, in: Technical Digest 9th International Photovoltaic Science and Engineering Conference, edited by T. Warabisako, Arisumi Printing, Tokyo (1996), pp. 681–682.
    6. R. Brendel, M. Hirsch, R. Plieninger, and J.H. Werner, “Experimental Analysis of Quantum Efficiencies for Thin Layer Silicon Solar Cells with Back Surface Fields and Light Trapping Schemes”, in: Proc. 13th Europ. Photovolt. Sol. Energy Conf., Stephens & Associates, Bedford, UK (1996), pp. 432–435.
    7. U. Rau, T. Meyer, M. Goldbach, R. Brendel, and J.H. Werner, “Numerical Simulation of Innovative Device Structures for Silicon Thin Film Solar Cells”, in: Proc. 25th IEEE Photovolt. Spec. Conf., IEEE, Piscataway (1996), pp. 469–472, DOI: 10.1109/PVSC.1996.564045.
    8. J.H. Werner, J. Arch, R. Bergmann, R. Brendel, and S. Kolodinski, “Photodetektoren. Teilprojekt B.(Photodetectors. Partial project B)”, (1996).
    9. G. Wagner, B. Steiner, B. Winter, W. Dorsch, A. Voigt, H.P. Strunk, R. Brendel, M. Wolf, and J.H. Werner, “Polycrystalline Silicon Layers on Low Cost Silicon Ribbons for Photovoltaic Cell Applications”, in: Proc. 13th Europ. Photovolt. Sol. Energy Conf., Stephens & Associates, Bedford, UK (1996), pp. 461–464.
    10. R.B. Bergmann, G. Oswald, M. Albrecht, and J.H. Werner, “Polycrystalline Silicon on Glass Substrates for Thin Film Solar Cells”, Solid State Phenomena 51/52 515 (1996), DOI: 10.4028/www.scientific.net/SSP.51-52.515.
    11. J.H. Werner, B. Winter, M. Wolf, S. Kolodinski, R. Brendel, M. Hirsch, H.J. Queisser, J. Wollweber, and W. Schröder, “Potential of Si_1-xGe_x-Alloys for Higher Solar Cell Efficiencies”, in: Proc. 13th Europ. Photovolt. Sol. Energy Conf., Stephens & Associates, Bedford, UK (1996), pp. 111–114.
    12. R. Brendel, M. Hirsch, R. Plieninger, and J.H. Werner, “Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement”, IEEE Transactions on Electron Devices 43, 1104 (1996).
    13. M. Wolf, R. Brendel, and J.H. Werner, “Quantum Efficiency of Silicon Solar Cells at Low Temperature”, in: Technical Digest 9th International Photovoltaic Science and Engineering Conference, edited by T. Warabisako, Arisumi Printing, Tokyo (1996), pp. 519–520.
    14. R. Brendel, M. Hirsch, R. Plieninger, and J.H. Werner, “Quantum Efficieny Analysis of Thin-Layer Silicon Solar Cells with Back Surface Fields and Optical Confinement”, IEEE Trans. Electron Devices 43, 1104 (1996), DOI: 10.1109/16.502422.
    15. J. Kühnle, R.B. Bergmann, J.H. Werner, and M. Albrecht, “Silicon Surface Passivation by Metal Layer for Low-temperature Epitaxy”, J. Cryst. Growth 163, 470 (1996), DOI: 10.1016/0022-0248(95)01004-1.
    16. R. Brendel, J.H. Werner, and H.J. Queisser, “Thermodynamic Efficiency Limits For Semiconductor Solar Cells with Carrier Multiplication”, Solar Energy Materials and Solar Cells 41/42 419 (1996), DOI: 10.1016/0927-0248(95)00125-5.
  22. 1995

    1. M. Hirsch, U. Rau, and J.H. Werner, “Analysis of Internal Quantum Efficiency and a New Graphical Evaluation Scheme”, Solid State Electronics 38, 1009 (1995), DOI: 10.1016/0038-1101(95)98669-T.
    2. J.H. Werner, “Basic research challenges in crystalline silicon photovoltaics”, in: Fifth Workshop on the Role of Impurities and Defects in Silicon Device Processing, Extended Abstracts, NREL, Golden, CO (United States) (1995), pp. 23–24.
    3. R. Brendel, M. Hirsch, M. Stemmer, U. Rau, and J.H. Werner, “Internal Quantum Efficiency of Thin Epitaxial Silicon Solar Cells”, Applied Physics Letters 66, 1261 (1995), DOI: 10.1063/1.113256.
    4. H.J. Queisser and J.H. Werner, “Optimization of High-Efficiency Solar Cells: An Inverse Band Structure Problem”, in: The Inverse Problem - Symposium ad memoriam Hermann von Helmhotz, edited by H. Lübbig, Akademie-Verlag, Berlin (1995), pp. 165–180.
    5. S. Kolodinski, J.H. Werner, and J. Queisser, H, “Potential of Si_1-xGe_x Alloys for Auger Generation in Highly Efficient Solar Cells”, Appl. Phys. A 61, 535 (1995), DOI: 10.1007/BF01540255.
    6. H.J. Queisser and J.H. Werner, “Principles and Technology of Photovoltaic Energy Conversion”, in: Proc. 4th Int. Conf. on Solid-State and Integrated-Circuit Technology, edited by G. Baldwin, Z. Li, C.C. Tsai and H. Zhang, Publishing House of The Electronics Industry, Beijing, China (1995), pp. 146–150, DOI: 10.1109/ICSICT.1995.499656.
    7. J.H. Werner, R. Brendel, and H.J. Queisser, “Radiative Efficiency Limit of Terrestrial Solar Cells with Internal Carrier Multiplication”, Appl. Phys. Lett. 1028 (1995), DOI: 10.1063/1.114719.
    8. M. Brieger, H. Dittrich, M. Klose, H.W. Schock, and J. Werner, “Semiconductor processing and characterization with lasers(applications in photovoltaics)”, Materials science forum (1995).
    9. G. Langguth, M. Schöfthaler, T. Sameshima, and J.H. Werner, “Silicon Solar Cell Passivation by Low-Temperature Evaporation of SiO_2”, in: Proc. 13th EC Photovoltaic Solar Energy Conf, Stephens & Associates, Bedford, UK (1995), pp. 1530–1533.
  23. 1994

    1. M. Hirsch, U. Rau, and J.H. Werner, “Admittance of Minority Carriers in pn-Junction Silicon Solar Cells”, in: Proc. 12th European Photovoltaic Solar Energy Conference, edited by R. Hill, W. Palz and P. Helm, Stephens & Associates, Bedford, UK (1994), pp. 537–540.
    2. J.H. Werner, J.K. Arch, R. Brendel, G. Langguth, M. Konuma, and E. Bauser, “Crystalline Thin Film Silicon Solar Cells”, in: Proc. 12th European Photovoltaic Solar Energy Conference, edited by R. Hill, W. Palz and P. Helm, (1994), pp. 1823–1826.
    3. M. Schöfthaler, U. Rau, and J.H. Werner, “Direct Observation of a Scaling Effect on Effective Minority Carrier Lifetimes”, J. Appl. Phys. 76, 4168 (1994), DOI: http://dx.doi.org/10.1063/1.358450.
    4. M. Schöfthaler, U. Rau, G. Langguth, M. Hirsch, R. Brendel, and J.H. Werner, “Distinction between Bulk and Surface Recombination in Silicon Wafers”, in: Proceedings of the 12th European Photovoltaic Solar Energy Conference, edited by R. Hill, W. Palz and P. Helm, Stephens & Associates, Bedford, UK (1994), pp. 533–536.
    5. U. Rau and J.H. Werner, “Electronic Transport of Schottky Contacts in the Presence of Barrier Inhomogeneities”, in: Proc. 4th Int. Conf. on Formation of Semicond. Interfaces, edited by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, World Scientific, Singapore (1994), pp. 249–252.
    6. M. Schöfthaler, R. Brendel, G. Langguth, and J.H. Werner, “High-Quality Surface Passivation by Corona-Charged Oxides for Semiconductor Surface Characterization”, in: Proc. 1st World Conference on Photovoltaic Energy Conversion, IEEE, New York (1994), pp. 1509–1512, DOI: 10.1109/WCPEC.1994.520237.
    7. R. Bergmann and J.H. Werner, “Kristallzüchtung für die Photovoltaik-Forschung in Deutschland”, dgkk-Mitteilungsblatt 59, 15 (1994).
    8. J.H. Werner, U. Spadaccini, and F. Banhart, “Low-temperature ohmic Au/Sb contacts to n-type Si”, J. Appl. Phys. 75, 994 (1994), DOI: http://dx.doi.org/10.1063/1.356425.
    9. J.H. Werner, R. Brendel, and H.J. Oueisser, “New upper efficiency limits for semiconductor solar cells”, in: Proc. 1st World Conference on Photovoltaic Energy Conversion (2), IEEE, New York (1994), pp. 1742–1745 vol.2, DOI: 10.1109/WCPEC.1994.520555.
    10. J.H. Werner, S. Kolodinski, and H.J. Queisser, “Novel optimization principles and efficiency limits for semiconductor solar cells”, Phys. Rev. Lett. 72, 3851 (1994), DOI: 10.1103/PhysRevLett.72.3851.
    11. S. Kolodinski, H.J. Queisser, and J.H. Werner, “Novel Principles for Maximal Energy Conversion Efficiency in Photovoltaics”, in: Proc. 22th ICPS, (1994), pp. 1–4.
    12. J.H. Werner, “Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors”, in: Polycrystalline Semiconductors III - Physics and Technology / Solid State Phenomena (37–38), edited by H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud, Trans Tech, Zürich (1994), pp. 213–218, DOI: 10.4028/www.scientific.net/SSP.37-38.213.
    13. R.B. Bergmann, J. Kühnle, J.H. Werner, S. Oelting, M. Albrecht, H. Strunk, K. Herz, and M. Powalla, “Polycrystalline silicon for thin film solar cells”, in: Proc. 1st World Conference on Photovoltaic Energy Conversion, IEEE, New York (1994), pp. 1398–1401, DOI: 10.1109/WCPEC.1994.520209.
    14. S. Kolodinski, J.H. Werner, and H.J. Queisser, “Quantum Efficiencies Exceeding Unity in Silicon Leading to Novel Selection Principles for Solar Cell Materials”, Solar Energy Materials and Solar Cells 33, 275 (1994), DOI: 10.1016/0927-0248(94)90230-5.
    15. M. Hirsch, R. Brendel, J.H. Werner, and U. Rau, “Quantum Efficiency of Thin Film Silicon Solar Cells on a Highly Doped Substrate”, in: Proc. 1st World Conference on Photovoltaic Energy Conversion, IEEE, New York (1994), pp. 1454–1457, DOI: 10.1109/WCPEC.1994.520223.
    16. J.H. Werner and U. Rau, “Schottky Contacts on Silicon”, in Silicon-Based Millimeter-Wave Devices, edited by Luy and et al (Springer Series Electronics and Photonics, Berlin, Heidelberg, 1994), pp. 89–148.
    17. J.H. Werner, R. Bergmann, and R. Brendel, “The Challenge of Crystalline Thin Film Silicon Solar Cells”, in Festkörperprobleme/Advances in Solid State Physics, edited by R. Helbig (Vieweg, Braunschweig, 1994), pp. 115–146, DOI: 10.1007/BFb0107524.
  24. 1993

    1. M. Dahmen, U. Rau, M. Kawanaka, J. Sone, and J.H. Werner, “Band Offset Variations at Ge/GaAs (100) Interfaces”, Applied Physics Letters 62, 261 (1993), DOI: 10.1063/1.108983.
    2. J.K. Arch, E. Bauser, S. Kolodinski, and J.H. Werner, “Characterization of Liquid Phase Epitaxy Silicon for Thin-Film Solar Cells”, in: Proc. 11th EC Photovolt. Solar Energy Conf., Harwood Academic, Chur (1993), pp. 1047–1052.
    3. J.K. Arch, J.H. Werner, and E. Bauser, “Hall Effect Analysis of Liquid Phase Epitaxy Silicon for Thin Film Solar Cells”, Solar Energy Materials and Solar Cells 29, 387 (1993), DOI: 10.1016/0927-0248(93)90097-M.
    4. M. Schöfthaler, U. Rau, W. Füssel, and J.H. Werner, “Optimization of the Back Contact Geometry for High Efficiency Solar Cells”, in: Conf. Rec. 23rd IEEE Photov. Spec. Conf., IEEE, New York (1993), pp. 315–320, DOI: 10.1109/PVSC.1993.347164.
    5. S. Kolodinski, J.H. Werner, T. Wittchen, and H.J. Queisser, “Quantum Efficiencies Exceeding Unity due to Impact Ionization in Silicon Solar Cells”, Appl. Phys. Lett. 63, 2405 (1993), DOI: 10.1063/1.110489.
    6. S. Kolodinski, J.H. Werner, and H.J. Queisser, “Quantum Efficiencies Exceeding Unity in Silicon Leading to Novel Selection Principles for Solar Cell Materials”, in: Tech. Dig. Int. PVSEC7, Nagoya, Japan, (1993), pp. 629–630.
    7. J.H. Werner, S. Kolodinski, U. Rau, J.K. Arch, and E. Bauser, “Silicon solar cell of 16.8 µm thickness and 14.7 % efficiency”, Appl. Phys. Lett. 62, 2998 (1993), DOI: 10.1063/1.109169.
    8. J.H. Werner and H.H. Güttler, “Temperature Dependence of Schottky Barrier Heights on Silicon”, J. Appl. Phys. 73, 1315 (1993), DOI: http://dx.doi.org/10.1063/1.353249.
    9. S. Kolodinski, J.H. Werner, U. Rau, J.K. Arch, and E. Bauser, “Thin Film Silicon Solar Cells from Liquid Phase Epitaxy”, in: Proc. 11th EC Photovolt. Solar Energy Conf., Harwood Academic, Chur (1993), pp. 53–56.
  25. 1992

    1. J.H. Werner, H. Güttler, and U. Rau, “Barrier Inhomogeneities at Schottky Contacts: Curved Richardson Plots, Idealities, and Flat Band Barriers”, MRS Proceedings 260, 311 (1992), DOI: 10.1557/PROC-260-311.
    2. U. Rau, H.H. Güttler, and J.H. Werner, “Barrier Inhomogeneities Dominating Low-Frequency Excess Noise of Schottky Contacts”, MRS Proceedings 260, 305 (1992), DOI: 10.1557/PROC-260-305.
    3. P.O. Hansson, M. Albrecht, H.P. Strunk, E. Bauser, and J.H. Werner, “Dimensionality and Critical Sizes of GeSi on Si(100)”, Thin Solid Films 216, 199 (1992), DOI: doi:10.1016/0040-6090(92)90837-2.
    4. M. Hügle and J.H. Werner, “Mechanisms of alternating current transport in metal/insulator/silicon tunnel junctions”, Applied Physics A, 1 (1992).
    5. A.W. Blakers, J.H. Werner, E. Bauser, and H.J. Queisser, “Silicon epitaxial solar cell with 663 mV Open-circuit Voltage”, Appl. Phys. Lett. 60, 2752 (1992), DOI: 10.1063/1.106866.
    6. U. Rau, H. Güttler, and J.H. Werner, “The Ideality of Spatially Inhomogeneous Schottky Contacts”, MRS Proceedings 260, 245 (1992), DOI: 10.1557/PROC-260-245.
  26. 1991

    1. A.W. Blakers, J.H. Werner, E. Bauser, and H.J. Queisser, “663 mV Open Circuit Voltage Epitaxial Thin Film Silicon Solar Cells”, in: 10th EC Photovoltaik Solar Energy Conference, edited by A. Luque, G. Sala, W. Palz, G. Dos Santos and P. Helm, Kluwer Academic Publishers, Dordrecht, Niederlande (1991), pp. 692–695.
    2. J.H. Werner and G.H. H., “Barrier Inhomogeneities at Schottky Contacts”, J. Appl. Phys. 69, 1522 (1991), DOI: http://dx.doi.org/10.1063/1.347243.
    3. J.H. Werner and N.E. Christensen, “Classification of Grain Boundary Activity in Semiconductors”, in: Springer Proc. in Phys. 54, Polycrystalline Semiconductors II, 54, edited by J.H. Werner and H.P. Strunk, Springer Verlag, Berlin/Heidelberg (1991), pp. 145–150.
    4. J.H. Werner, “Comment on 'Negative Capacitance at Metal-Semiconductor Interfaces’”, J. Appl. Phys. 70, 1087 (1991), DOI: http://dx.doi.org/10.1063/1.349677.
    5. J.H. Werner and et al., “Forschungsaspekte der Photovoltaik”, in Sonnenergie, edited by J. Diekmann (Walter de Gruyter, Berlin, 1991), pp. 63–84.
    6. O. Valassiades, C.A. Dimitriades, and J.H. Werner, “Galvanomagnetic Behavior of Semiconduction FeSi_2 Films”, J. Appl. Phys. 70, 890 (1991), DOI: http://dx.doi.org/10.1063/1.349619.
    7. U. Rau, H.H. Güttler, and J.H. Werner, “Low-Frequency Noise and Inhomogenous Current Transport at Schottky Diodes”, in Noise in Physical Systems and 1/f Fluctuations, edited by T. Musha, S. Sato and M. Yamamoto (Ohmsha Ltd., Japan, 1991), pp. 213–216.
    8. J.H. Werner and P. Wagner, “Solarzellen aus Silizium”, in Halbleiter in Forschung und Technik, edited by J. Werner, J. Weber and W. Rühle (Expert Verlag, Ehningen bei Böblingen, Deutschland, 1991), pp. 126–139.
    9. J.H. Werner, “Solarzellen mit Silizium aus der Flüssigphasenepitaxie”, Physikalische Blätter 47, 1075 (1991), DOI: 10.1002/phbl.19910471213.
    10. J.H. Werner and H.G. Güttler, “Transport Properties of Inhomogenous Schottky Contacts”, Physica Scripta 258 (1991).
  27. 1990

    1. R. Bergmann, E. Bauser, and J.H. Werner, “Defect-Free Epitaxial Lateral Overgrowth of Oxidized (111)-Silicon by Liquid Phase Epitaxy”, Appl. Phys. Lett. 57, 351 (1990), DOI: 10.1063/1.103689.
    2. C.A. Dimitriadis, J.H. Werner, S. Logothetidis, M. Stutzmann, J. Weber, and R. Nesper, “Electronic Properties of Semiconducting FeSi_2 Films”, J. Appl. Phys 68, 1726 (1990), DOI: http://dx.doi.org/10.1063/1.346601.
    3. H.H. Güttler, J.H. Werner, and H. and Stoll, “Excess Noise Measurements at Silicide/Silicon Schottky Diodes”, in Noise in Physical Systems, edited by A. Ambrozy (Akademiai Kiadó, Budapest, 1990), pp. 487–490.
    4. C.A. Dimitriadis and J.H. Werner, “Growth Mechanism and Morphology of Semiconducting FeSi_2 Films”, Appl. Phys. 68, 93 (1990), DOI: http://dx.doi.org/10.1063/1.347159.
    5. H.H. Güttler and J.H. Werner, “Influence of Barrier Inhomogeneities on Noise at Schottky Contacts”, Appl. Phys. Lett. 56, 1113 (1990), DOI: 10.1063/1.102584.
    6. P.-O. Hansson, J.H. Werner, L. Tapfer, L.P. Tilly, and E. Bauser, “Liquid-phase Epitaxy Growth and Characterization of Si_1-xGe_x Layers on Si Substrates”, J. Appl. Phys. 68, 2158 (1990), DOI: http://dx.doi.org/10.1063/1.346572.
  28. 1989

    1. J.H. Werner, “Band Tailing in Polycrystalline and Disordered Silicon”, in: Springer Proc. in Phys. 35: Polycrystalline Semiconductors, edited by J.H. Werner, H.J. Müller and H.P. Strunk, Springer, Heidelberg (1989), pp. 345–351.
    2. J.H. Werner, “Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes”, in Metallization and Metal-Semiconductor Interfaces, edited by I.P. Batra (Plenum Press, New York, 1989), pp. 235–256.
    3. J.H. Werner, “Interface States at Silicon Grain Boundaries”, in: Inst. Phys. Conf. Ser. 104 (102), 2, (1989), pp. 63–74.
    4. J.H. Werner, H. v. Känel, G. Markewitz, and R.T. Tung, “Pressure Dependences of Silicide/Silicon Schottky Barrier Heights”, Appl. Surf. Sci. 4142, 159 (1989), DOI: 10.1016/0169-4332(89)90049-4.
    5. J.H. Werner, “Silicide/Silicon Schottky Barriers under Hydrostatic Pressure”, Appl. Phys. Lett. 54, 1528 (1989), DOI: 10.1063/1.101385.
  29. 1988

    1. A.J. Madenach and J.H. Werner, “Deep-level-noise Spectroscopy of Ion-Implanted Polysilicon Films”, Phys. Rev. B 38, 1958 (1988), DOI: http://dx.doi.org/10.1103/PhysRevB.38.1958.
    2. A.J. Madenach and J. Werner, “Noise Spectroscopy of Silicon Grain Boundaries”, Phys. Rev. B 38, 13150 (1988), DOI: http://dx.doi.org/10.1103/PhysRevB.38.13150.
    3. J.H. Werner, A.F.J. Levi, R.T. Tung, and M. Pinto, “Origin of Excess Capacitances at Epitaxial Silicide Contacts”, in: Proc. 2nd Int. Symp. on Silicon Molecular Beam Epitaxy, 88–8, edited by J.C. Bean and L.J. Schowalter, The Electrochemical Society, Pennington, USA (1988), pp. 266–273.
    4. J.H. Werner, A.F.J. Levi, R.T. Tung, M. Anzlowar, and M. Pinto, “Origin of the Excess Capacitance at Intimate Schottky Contacts”, Phys. Rev. Lett. 60, 53 (1988), DOI: http://dx.doi.org/10.1103/PhysRevLett.60.53.
    5. J.H. Werner, “Schottky Barrier and pn-Junction I/V Plots - Small Signal Evaluation”, Appl. Phys. A. 47, 291 (1988).
  30. 1987

    1. J.H. Werner, R.T. Tung, A.F.J. Levi, and M. Anzlowar, “Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts”, in: MRS Proceedings (91), (1987), pp. 433–438, DOI: 10.1557/PROC-91-433.
    2. J.H. Werner and H.J. Queisser, “Electrical and Electronic Properties of Grain Boundaries in Silicon”, MRS Proceedings 106, 53 (1987), DOI: https://doi.org/10.1557/PROC-106-53.
    3. M. Konuma, M. Singh, S. Subramanian, J.H. Werner, and E. Bauser, “Hydrogen Plasma Induced Surface Damage in Silicon”, in: 8th Int. Symposium on Plasma Chemistry, Tokyo, Japan (1987), pp. 1663–1668.
  31. 1986

    1. M. Liehr, M. Renier, R.A. Wachnik, J.H. Werner, G.S. Scilla, and P.S. Ho, “Electrical Properties of Vacuum Annealed Si Surfaces”, J. Vac. Sci. Technol. A 5, 2131 (1986).
    2. F.J. Stützler, A.J. Madenach, J.H. Werner, Y.C. Lu, and H.J. Queisser, “Electronic Properties of Grain Boundaries in Silicon”, in: Proc. 4th Int. Conf. on Grain Boundary Structure and Related Phenomena, Journ. Jap. Inst. Metals 5, Sendai (1986), pp. 1005–1012.
    3. J.H. Werner and K. Ploog, “Interface States at Au/GaAs Schottky Contacts”, MRS Proceedings 54, 395 (1986), DOI: 10.1557/PROC-54-395.
    4. J.H. Werner, K. Ploog, and H.J. Queisser, “Interface-State Measurements at Schottky Contacts: A New Admittance Technique”, Phys. Rev. Lett. 57, 1080 (1986), DOI: http://dx.doi.org/10.1103/PhysRevLett.57.1080.
    5. A.J. Madenach, J.H. Werner, and H. Stoll, “Noise at Semiconductor Grain Boundaries: A Quantitative Model”, in edited by A. D’Amico and P. Mazzetti (Elsevier Science, Amsterdam, 1986), pp. 223–226.
    6. A.J. Madenach and J. Werner, “Noise Spectroscopy of Interface States at Semiconductor Grain Boundaries”, in: Proc. 18th ICPS, Stockholm (1986), pp. 825–828.
  32. 1985

    1. J.H. Werner, “Electronic Properties of Grain Boundaries”, in Polycrystalline Semiconductors I, edited by H.P. Strunk, J.H. Werner and H.J. Möller (Springer Verlag, Berlin, 1985), pp. 76–94.
    2. J. Werner, “Electronic Properties of Grain Boundaries in Silicon”, in Poly-, Microcrystalline and Amorphous Semiconductors, edited by P. Pinard and S. Kalbitzer (Editions de Physique, Les Ulis, 1985), pp. 289–300.
    3. J.H. Werner and M. Peisl, “Exponential Band Tails at Silicon Grain Boundaries”, MRS Proceedings 46, 575 (1985), DOI: 10.1557/PROC-507-915.
    4. J.H. Werner and M. Peisl, “Exponential Band Tails in Polycrystalline Semiconductor Films”, Phys. Rev. 31, 6881 (1985), DOI: http://dx.doi.org/10.1103/PhysRevB.31.6881.
    5. A.J. Madenach, J.H. Werner, and F.J. Stützler, “Noise: A New Method for the Characterization of Grain Boundaries in Polysilicon Solar Cells”, in: Conf. Rec. 18th IEEE Photov. Spec. Conf, IEEE, New York (1985), pp. 1088–1093.
    6. A.J. Madenach and J.H. Werner, “Non-Lorentzian Noise at Semiconductor Interfaces”, Phys. Rev. Lett. 55, 1212 (1985), DOI: http://dx.doi.org/10.1103/PhysRevLett.55.1212.
  33. 1983

    1. J. Werner and J. Strunk, “Electronical and Structural Properties of Grain Boundaries in Cz-Grown Silicon Bicrystals”, de Physique (Paris) C1 43, 89 (1983).
  34. 1982

    1. J.H. Werner, W. Jantsch, and H.J. Queisser, “Density of States of Grain Boundaries in Silicon”, Solid-State Commun. 42, 415 (1982), DOI: 10.1016/0038-1098(82)90962-0.
    2. J.H. Werner, W. Jantsch, K.H. Fröhner, and H.J. Queisser, “Transport across Silicon Grain Boundaries”, MRS Proceedings 5, 99 (1982), DOI: 10.1557/PROC-5-99.
  35. 1981

    1. J. Werner, W. Schwarz, and A. Schmidt, “Additionsverbindungen aus Trimethylstibindihalogeniden und Antimon (III)-halogeniden/Addition Compounds of Trimethylstibine Dihalogenides and Antimony (III) Halogenides”, Zeitschrift für Naturforschung B 36, 556 (1981).