Dieses Bild zeigt  Jürgen Köhler

Dr.-Ing.

Jürgen Köhler

Leiter Arbeitsgruppe Laserprozesse
Institut für Photovoltaik

Kontakt

+49 711 685-67159
+49 711 685-67143

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.235

Publikationen von Jürgen R. Köhler (PUMA):
  1. 2018

    1. Chr. Sämann, K. Kelesiadou, S.S. Hosseinioun, M. Wachtler, J.R. Köhler, K.P. Birke, M. Schubert, and J.H. Werner, “Laser porosificated silicon anodes for lithium ion batteries”, Advanced Energy Materials 8 (1), 1701705 (Artikel (2018), DOI: 10.1002/aenm.201701705.
    2. T. Menold, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Surface patterning of monocrystalline silicon induced by spot laser melting”, Journal of Applied Physics 124, 163104 (2018), DOI: 10.1063/1.5049781.
  2. 2017

    1. P.C. Lill, M. Dahlinger, and J.R. Köhler, “Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon”, Materials 10, 189 (2017), DOI: 10.3390/ma10020189.
    2. F.-W. Speckmann, D. Müller, J. Köhler, and K.P. Birke, “Low pressure glow-discharge methanation with an ancillary oxygen ion conductor”, JOURNAL OF CO2 UTILIZATION 19, 130 (2017), DOI: 10.1016/j.jcou.2017.03.003.
    3. F. Dreyer, N. Hoppe, J. Köhler, W. Vogel, M. Dahlinger, M. Félix Rosa, L. Rathgeber, J. Werner, and M. Berroth, “Schottky-Fotodioden basierend auf laserkristallisierten Germanium-Schichten”, in: Kleinheubacher Tagung, U.R.S.I. Landesausschuss in der Bundesrepublik Deutschland e.V, Miltenberg, Germany (2017), pp. KH2017-Di-D2-04.
  3. 2016

    1. P.C. Lill, M. Dahlinger, and J.R. Köhler, “Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon”, Materials (2016).
    2. Chr. Sämann, K. Kelesiadou, S.S. Hosseinioun, M. Wachtler, J.R. Köhler, K.P. Birke, M. Schubert, and J.H. Werner, “Porous Silicon Thin Film Anodes for Lithium Ion Batteries”, in: Proceedings of the 5th International Education Forum on Environment and Energy, (2016), DOI: 10.13140/RG.2.2.35267.60962.
    3. C. Sämann, J.R. Köhler, M. Dahlinger, M.B. Schubert, and J.H. Werner, “Pulsed Laser Porosification of Silicon Thin Films”, Materials 9, 509 (2016), DOI: 10.3390/ma9070509.
  4. 2015

    1. M. Dahlinger, K. Carstens, E. Hoffmann, S. Wansleben, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “23.2% Efficiency with Laser Processed IBC Solar Cells”, in: 31st European Photovoltaic Solar Energy Conference and Exhibition, WIP, München (2015), pp. 462–465, DOI: 10.4229/EUPVSEC20152015-2DO.2.4.
    2. K. Carstens, M. Dahlinger, E. Hoffmann, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Amorphous Silicon Passivation for p ++ and n ++ Areas on IBC Solar Cells”, in: Proc. of the 4th International Education Forum on Environment and Energy Science, (2015), DOI: 10.13140/RG.2.2.13666.94407.
    3. P.C. Lill and J.R. Köhler, “Infrared backwards laser melting of a silicon wafer”, The European Physical Journal Applied Physics 72, 20104 (2015).
    4. M. Dahlinger, B. Bazer-Bachi, T.C. Röder, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Laser-Doped Back-Contact Solar Cells”, IEEE J. Photovoltaics 5, 812 (2015).
    5. J.R. Köhler and S.J. Eisele, “Phosphorus out-diffusion in laser molten silicon”, JOURNAL OF APPLIED PHYSICS 117, 145701 (2015), DOI: 10.1063/1.4917048.
    6. J.R. Köhler and S.J. Eisele, “Phosphorus out-diffusion in laser molten silicon”, J. Appl. Phys. 117, 145701 (2015), DOI: 10.1063/1.4917048.
    7. K. Carstens, M. Dahlinger, E. Hoffmann, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Universal Passivation for p++ and n++ Areas on IBC Solar Cells”, Energy Procedia 77, 779 (2015).
  5. 2014

    1. M. Dahlinger, K. Carstens, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “Laser Doped Screen-printed Back Contact Solar Cells Exceeding 21% Efficiency”, Energy Procedia 55, 410 (2014).
  6. 2013

    1. M. Dahlinger, B. Bazer-Bachi, T. Röder, J.R. Köhler, R. Zapf-Gottwick, and J.H. Werner, “22.0% Efficient Laser Doped Back Contact Solar Cells”, Energy Procedia 38, 250 (2013).
    2. Y. Weng, B. Kedjar, K. Ohmer, J.R. Köhler, J.H. Werner, and H.P. Strunk, “Dislocation formation during laser processing of silicon solar cell materials”, physica status solidi (c) 10, 28 (2013), DOI: 10.1002/pssc.201200548.
    3. E. Hoffmann, T. Roeder, J.R. Köhler, and J.H. Werner, “Effect of silicon dioxide ablation during laser transferred contacts process”, in: Proc. of the 2nd International Education Forum on Environment and Energy Science, Tokyo Institute of Technology, (2013), DOI: 10.13140/2.1.2150.5608.
  7. 2012

    1. M. Dahlinger, B. Bazer-Bachi, T.C. Röder, R. Zapf-Gottwick, J.R. Köhler, and J.H. Werner, “19.2 % Laser doped Back Contact Solar Cell”, in: Proc. 5th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2012), DOI: 10.13140/2.1.1527.9689.
    2. P.C. Lill, M. Dahlinger, K.J. R., and J.H. Werner, “Full Area Antimony Laser Doped p-type Solar Cells”, in: Proc. 5th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2012), DOI: 10.13140/2.1.2052.2565.
    3. M. Dahlinger, S.J. Eisele, P.C. Lill, J.R. Köhler, and J.H. Werner, “Full area laser doped boron emitter silicon solar cells”, in: Proc. 38th IEEE Photovoltaic Specialists Conference (PVSC), IEEE, New York, USA (2012), pp. 1029–1031, DOI: 10.1109/PVSC.2012.6317778.
    4. P.C. Lill, M. Dahlinger, J.R. Köhler, and J.H. Werner, “Laser Doping of Silicon Using Antimony”, in: 27th European Photovoltaic Solar Energy Conference, WIP, Munich, (2012), pp. 1894–1896, DOI: 10.4229/27thEUPVSEC2012-2CV.6.37.
    5. M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Laser induced lifetime degradation in p-type crystalline silicon”, Journal of Applied Physics 111, 114 (2012).
    6. B. Bazer-Bachi, P.C. Lill, M. Dahlinger, S.J. Eisele, R. Zapf-Gottwick, J.R. Köhler, and J.H. Werner, “Optimizing P Furnace Diffusion Layers for Laser Doping”, in: Proc. 27th European Photovoltaic Solar Energy Conference, WIP, Munich (2012), pp. 1954–1957, DOI: 10.4229/27thEUPVSEC2012-2CV.6.56.
  8. 2011

    1. K. Ohmer, Y. Weng, J.R. Köhler, H.P. Strunk, and J.H. Werner, “Defect Formation in Silicon During Laser Doping”, IEEE Journal of Photovoltaics 1, 183 (2011), DOI: 10.1109/JPHOTOV.2011.2173298.
    2. J.H. Werner, M. Reuter, R. Zapf-Gottwick, J.R. Köhler, and M. Schubert, “Innovative Concepts for Solar Cells”, in: Proc. 4th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo (2011).
    3. M. Dahlinger, S.J. Eisele, J.R. Köhler, and J.H. Werner, “Laser Doped Boron Emitters with Sputtered Precursor”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 1152–1154, DOI: 10.4229/26thEUPVSEC2011-2DO.2.3.
    4. E. Hoffmann, T.C. Röder, B. Conrad, J.R. Köhler, and J.H. Werner, “Two Step Process for Optimized Laser Transferred Contacts”, in: Proc. 26th European Photovoltaic Solar Energy Conference, WIP, Munich (2011), pp. 1640–1643, DOI: 10.4229/26thEUPVSEC2011-2BV.3.17.
  9. 2010

    1. T.C. Röder, E. Hoffmann, J.R. Köhler, and J.H. Werner, “30 µm wide contacts on silicon cells by laser transfer”, in: Proc. of the 35th IEEE Photovoltaic Specialists Conference (PVSC), IEEE, New York, USA (2010), pp. 3597–3599, DOI: 10.1109/PVSC.2010.5614378.
    2. T.C. Röder, S.J. Eisele, P. Grabitz, C. Wagner, G. Kulushich, J.R. Köhler, and J.H. Werner, “Add-on laser tailored selective emitter solar cells”, Progress in Photovoltaics: Research and Applications 18, 505 (2010), DOI: 10.1002/pip.1007.
    3. K. Ohmer, Y. Weng, J.R. Köhler, H.P. Strunk, and J.H. Werner, “Effect of Pulse Energy Density on Silicon during Laser Doping”, in: 4th Int. Forum on Multidisciplinary Educ. and Res. for Energy Science, Tokyo Institute of Technology, Tokyo, Japan (2010), DOI: 10.13140/2.1.3100.8320.
  10. 2009

    1. T. Röder, P. Grabitz, S. Eisele, C. Wagner, J.R. Köhler, and J.H. Werner, “0.4% absolute efficiency gain of industrial solar cells by laser doped selective emitter”, in: Proc. 34th IEEE Photovoltaic Specialists Conference (PVSC), IEEE Publishing Service, Piscataway; NY, USA (2009), pp. 871–873, DOI: 10.1109/PVSC.2009.5411149.
    2. S.J. Eisele, T.C. Röder, J.R. Köhler, and J.H. Werner, “18.9% efficient full area laser doped silicon solar cell”, Applied Physics Letters 95, 1 (2009), DOI: http://dx.doi.org/10.1063/1.3232208.
    3. S. Eisele, T. Röder, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “18.9% efficient silicon solar cell with laser doped emitter”, in: Proc. 34th IEEE Photovoltaic Specialists Conference (PVSC), IEEE Publishing Service, Piscataway, NY (2009), pp. 883–885, DOI: 10.1109/PVSC.2009.5411148.
    4. C. Duran, S.J. Eisele, T. Buck, R. Kopecek, J.R. Köhler, and J.H. Werner, “Bifacial Solar Cells with Selective B-BSF by Laser Doping”, in: Proc. 24th Europ. Photovolt. Solar Conf., WIP, Munich (2009), pp. 1775–1778, DOI: 10.4229/24thEUPVSEC2009-2CV.5.19.
    5. C. Köhler, M.B. Schubert, B. Lutz, J.H. Werner, J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, A. Calderón, M.G. Fernández, G. Gómez, F.J. González-Sánchez, C. Martínez-Rivero, F. Matorras, T. Rodrigo, M. Sobrón, I. Vil, and A.L. Virto, “Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring”, Nuclear Instruments and Methods in Physics Research A 608, 55 (2009), DOI: http://dx.doi.org/10.1016/j.nima.2009.06.058.
    6. J.R. Köhler, P. Grabitz, S.J. Eisele, T.C. Röder, and J.H. Werner, “Laser Doped Selective Emitters Yield 0.5% Efficiency Gain”, in: Proc. 24th Europ. Photovolt. Solar Conf., WIP, Munich (2009), pp. 1847–1850, DOI: 10.4229/24thEUPVSEC2009-2CV.5.38.
  11. 2008

    1. T. Röder, A. Esturo-Breton, S. Eisele, C. Wagner, J.R. Köhler, and J.H. Werner, “Fill Factor of Laser Doped Textured Silicon Solar Cells”, in: Proc. 23rd Europ. Photovolt. Solar Energy Conf., edited by D. Lincot, H. Ossenbrink and P. Helm, WIP, Munich (2008), p. 1740, DOI: 10.4229/23rdEUPVSEC2008-2CV.5.50.
    2. T. Röder, C. Wagner, J. Köhler, and J.H. Werner, “Laser Doped Selective Emitter for Silicon Solar Cells”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 17, DOI: 10.13140/2.1.3362.9761.
    3. S. Eisele, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Phosphorus Sputtered Laser Doped Emitters”, in: 1st International Forum on Multidisciplinary Education and Research for Energy Science, Tokyo Institute of Technology, Tokyo (2008), p. 13.
    4. S. Eisele, M. Ametowobla, G. Bilger, J.R. Köhler, and J.H. Werner, “Phosphorus Sputtered Laser Doped Emitters”, 23rd European Photovoltaic Solar Energy Conference and Exhibition 1737 (2008), DOI: 10.4229/23rdEUPVSEC2008-2CV.5.49.
    5. J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, A. Calderón, G. Gómez, F.J. González-Sánchez, C. Martínez-Rivero, F. Matorras, T. Rodrigo, P. Ruiz-Arbol, M. Sobrón, I. Vila, A.L. Virto, C. Köhler, B. Lutz, M.B. Schubert, and J.H. Werner, “Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors”, Nuclear Instruments and Methods in Physics Research A 593, 608 (2008), DOI: http://dx.doi.org/10.1016/j.nima.2008.05.064.
  12. 2007

    1. M. Ametowobla, J.R. Köhler, A. Esturo-Breton, and J.H. Werner, “Improved Laser Doping for Silicon Solar Cells”, in: Proc. 22nd Europ. Photovolt. Solar En. Conf., WIP, Munich (2007), p. 1403.
    2. C. Carlsson, A. Esturo-Breton, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Laser Doping of Textured Monocrystalline Silicon Wafers”, in: Proc. 22nd Europ. Photovolt. Solar En. Conf., WIP, Munich (2007), p. 1593.
    3. C. Carlsson, J.R. Köhler, and J.H. Werner, “Pulsed Laser-Doped Selective Emitter for Silicon Solar Cells”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 538–539.
    4. S. Eisele, G. Bilger, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Sputtered Phosphorous Precursors for Laser Doping”, in: Techn. Digest 17th Photovolt. Sci. Eng. Conf., Fukuoka, Japan (2007), pp. 715–716.
  13. 2006

    1. A. Esturo-Bretón, M. Ametowobla, C. Carlsson, J. Köhler, and J.H. Werner, “15.4% Efficiency Silicon Solar Cells with Laser Doped Emitter”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 1247–1249.
    2. M. Ametowobla, J. Köhler, A. Esturo-Bretón, and J.H. Werner, “Characterization of a Laser Doping Process for Crystalline Silicon Solar Cells”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 1440–1443.
    3. A. Calderón, C. Martínez-Rivero, F. Matorras, T. Rodrigo, M. Sobrón, I. Vila, A.L. Virto, J. Alberdi, P. Arce, J.M. Barcala, E. Calvo, A. Ferrando, M.I. Josa, J.M. Luque, A. Molinero, J. Navarrete, J.C. Oller, C. Yuste, C. Köhler, B. Lutz, M.B. Schubert, and J.H. Werner, “Large-size high-performance transparent amorphous silicon sensors for laser beam position detection”, Nuclear Instruments and Methods in Physics Research A 565, 603 (2006), DOI: 10.1016/j.nima.2006.06.021.
    4. C. Carlsson, A. Esturo-Bretón, M. Ametowobla, J.R. Köhler, and J.H. Werner, “Laser Doping for Selective Silicon Solar Cell Emitter”, in: Proc. 21st European Photovoltaic Solar Energy Conference, WIP, München (2006), pp. 938–940.
  14. 2005

    1. A. Esturo-Bretón, M. Ametowobla, J. Köhler, and J.H. Werner, “Laser Doping for Crystalline Silicon Solar Cell Emitters”, in: Proc. 20th European Photovoltaic Solar Energy Conference, WIP, München (2005), pp. 851–854.
    2. M. Ametowabla, A. Esturo-Breton, J.R. Kohler, and J.H. Werner, “Laser processing of crystalline silicon solar cells”, in: Proc. 31st IEEE PVSEC, IEEE, Piscataway (2005), pp. 1277–1280, DOI: 10.1109/PVSC.2005.1488373.
    3. J. Köhler, U. Rau, M. Schubert, and J.H. Werner, “Photons and photonics in solar cells and photodiodes”, in: Themenheft Forschung „Photonics“, Univ. Stuttgart, (2005), pp. 96–103.
  15. 2002

    1. M. Nerding, R. Dassow, S. Christiansen, J.R. Köhler, J. Krinke, J.H. Werner, and H.-P. Strunk, “Microstructure of laser-crystallized silicon thin films on glass substrate”, Journal of Applied Physics 91, 4125 (2002), DOI: http://dx.doi.org/10.1063/1.1454189.
  16. 2001

    1. J.H. Werner, R. Dassow, T.J. Rinke, J.R. Köhler, and R.B. Bergmann, “From polycrystalline to single crystalline silicon on glass”, Thin Solid Films 383, 95 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01788-0.
    2. M. Nerding, S. Christiansen, J. Krinke, R. Dassow, J.R. Köhler, J.-H. Werner, and H.-P. Strunk, “Grain populations in laser-crystallised silicon thin films on glass substrates”, Thin Solid Films 383, 110 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01623-0.
    3. Y. Helen, R. Dassow, M. Nerding, K. Mourgues, F. Raoult, J.R. Köhler, T. Mohammed-Brahim, R. Rogel, O. Bonnaud, J.H. Werner, and H.P. Strunk, “High mobility thin film transistors by Nd:YVO_4-laser crystallization”, Thin Solid Films 383, 143 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(00)01586-8.
    4. K. Brühne, M.B. Schubert, C. Köhler, and J.H. Werner, “Nanocrystalline silicon from hot-wire deposition — a photovoltaic material?”, Thin Solid Films 395, 163 (2001), DOI: http://dx.doi.org/10.1016/S0040-6090(01)01250-0.
    5. J.R. Köhler, R. Dassow, and J.H. Werner, “Numerical Modeling of High Repetition Rate Pulsed Laser Crystallization of Silicon Films on Glass”, MRS Proceedings 695, D10.3.1 (2001), DOI: 10.1557/PROC-685-D10.3.1.
    6. E. Zrenner, F. Gekeler, V.P. Gabel, H.-G. Graf, M. Graf, E. Guenther, H. Haemmerle, B. Hoefflinger, K. Kobuch, K. Kohler, W. Nisch, H. Sachs, B. Schloßhauer, M. Schubert, H. Schwahn, M. Stelzle, A. Stett, B. Troeger, and S. Weiss, “Subretinales Mikrophotodioden-Array als Ersatz für degenerierte Photorezeptoren?”, Der Ophthalmologe 98, 357 (2001), DOI: 10.1007/ s003470170141.
    7. J.H. Werner, R.B. Bergmann, and J.R. Köhler, “Von polykristallinem zu einkristallinem Silicium auf Glas”, in: Konferenz Beschichtungstechnik und Materialien für Flachdisplays, fds, Workshop Deutsches Flachdisplay-Forum 10. April 2001, Frankfurt am Main (2001).
  17. 2000

    1. R. Dassow, J.R. Köhler, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and J.H. Werner, “Laser Crystallization of Silicon for High-performance Thin-film Transistors”, Semicond. Sci. Technol. 15, 31 (2000).
    2. R. Dassow, J.R. Köhler, M. Nerding, H.P. Strunk, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and J.H. Werner, “Nd:YVO_4 Laser Crystallization for Thin Film Transistors with a High Mobility”, MRS Proceedings 621, 1 (2000), DOI: 10.1557/PROC-621-Q9.3.1.
  18. 1999

    1. J.R. Köhler, R. Dassow, R. Bergmann, J. Krinke, H.P. Strunk, and J.H. Werner, “Large-Grained Polycrystalline Silicon on Glass by Copper Vapor Laser Annealing”, Thin Solid Films 337, 129 (1999).
    2. J.R. Köhler, R. Dassow, R.B. Bergmann, J. Krinke, H.P. Strunk, and J.H. Werner, “Large-grained polycrystalline silicon on glass by copper vapor laser annealing”, Thin Solid Films 337, 129 (1999), DOI: 10.1016/S0040-6090(98)01173-0.
    3. R. Dassow, J.R. Köhler, M. Grauvogl, R.B. Bergmann, and J.H. Werner, “Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications”, in: Solid State Phenomena, Scitec Publ., Uettikon am See, Switzerland (1999), pp. 193–198, DOI: 10.4028/www.scientific.net/SSP.67-68.193.
    4. Y. Helen, R. Dassow, K. Mourges, O. Bonnaud, T. Mohammed-Brahim, F. Raoult, J.R. Köhler, J.H. Werner, and D. Lemoine, “Reproducible High Field Effect Mobility Polysilicon Thin Film Transistors Involving Pulsed Nd:YVO_4 Laser Crystallization”, in: International Electron Devices Meeting 1999, Electron Devices Soc. IEEE, Piscataway, NJ, USA (1999), pp. 297–300.
  19. 1998

    1. H.N. Wanka, R. Brüggemann, C. Köhler, I. Zrinscak, and M.B. Schubert, “Effect of Filament Bias on the Properties of Amorphous and Nanocrystalline Silicon from Hot-Wire Chemical Vapor Deposition”, MRS Proceedings 507, 915 (1998), DOI: 10.1557/PROC-507-915.
    2. R.B. Bergmann, R.M. Hausner, N. Jensen, M. Grauvogl, L. Oberbeck, T.J. Rinke, M.B. Schubert, C. Zaczek, R. Dassow, J.R. Köhler, U. Rau, S. Oelting, J. Krinke, H.P. Strunk, and J.H. Werner, “High Rate, Low temperature Deposition of Crystalline Silicon Films for Thin Film Solar Cells on Glass”, in: Proc. 2nd World Conf. On Photovolt. Energy Conv., edited by J. Schmidt, H.A. Ossenbrink, P. Helm, H. Ehmann and E.D. Dunlop, E. C. Joint. Res. Centre, Luxembourg (1998), pp. 1260–1265.
    3. R.B. Bergmann, J. Köhler, R. Dassow, C. Zaczek, and J.H. Werner, “Nucleation and Growth of Crystalline Silicon Films on Glass for Solar Cells”, Phys. Status Solidi A 166, 587 (1998), DOI: https://doi.org/10.1002/(SICI)1521-396X(199804)166:2<587::AID-PSSA587>3.0.CO;2-U.
  20. 1997

    1. E. Zrenner, K.D. Miliczek, V.P. Gabel, H.G. Graf, E. Guenther, H. Haemmerle, B. Hoefflinger, K. Kohler, W. Nisch, M. Schubert, A. Stett, and S. Weiss, “The development of subretinal microphotodiodes for replacement of degenerated photoreceptors”, Ophthalmic Research 29, 269 (1997).
  21. 1993

    1. J. Köhler, W. Lawrenz, F. Meier, P. Meinhardt, W. Stolz, and W.H. Bloss, “Flow Field Diagnostics in Industrial Devices”, Berichte der Bunsengesellschaft für physikalische Chemie 97, 1568 (1993), DOI: 10.1002/bbpc.19930971212.
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